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Amorphous vanadium pentoxide (major phase) thin films of various thicknesses were grown on the substrates that possessed low (aluminized quartz) and high (quartz) infrared (IR) emittance property utilizing radio frequency (RF) magnetron sputtering technique. Microstructural characterizations are carried out by several techniques such as noncontact optical profilometry, energy dispersive X‐ray (EDX) spectroscopy, X‐ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and X‐ray diffraction (XRD). The as‐grown amorphous films show stoichiometric vanadium oxide, where vanadium is in V5+ as a major proportion compared with V4+ states. Thermo‐optical properties, namely, solar transmittance (τs), reflectance (ρs), absorptance (αs) and IR emittance (εir) along with optical constant, for example, optical band gap, are evaluated. A modified Urbach equation was used to simulate the optical absorption data to understand the presence optical absorption below the band edge. [ABSTRACT FROM AUTHOR]

Molybdenum doped vanadium oxide film on quartz and silicon substrates are grown by pulsed RF magnetron sputtering method. Surface morphology, phase analysis and oxide states are investigated by field emission scanning electron microscopy, X-ray diffraction and X-ray photoelectron spectroscopy techniques, respectively. Crystalline nature of the film deposited on both quartz and silicon are depicted. The transmittance and reflectance spectra recorded for the entire solar region. Further, optical constants viz. optical band gap and refractive index of the deposited films are estimated. Wavelength dependent low reflectance characteristic is observed for the deposited film on silicon. IR emittance (εIR) and sheet resistance (Rs) of the film are also evaluated. Copyright © 2017 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]