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In this paper, the two-step sequential deposition method was used to prepare the CH3NH3PbBrXI3-X films by introducing CH3NH3Br in the precursors. The surface morphology of the PbI2 films was controlled by anti-solvent extraction (ASE) to improve the microstructure and photo-physical properties of the perovskite films. It was noteworthy that, compared to the compact PbI2 films, the porous PbI2 films facilitated the growth of crystals and bromine incorporation in films, and the prepared perovskite films exhibited enlarged grain size, increased light absorption, enhanced Br incorporation and prolonged carrier lifetime, which resulted in excellent photo-electrical properties of the CH3NH3PbBrXI3-X films. With porous PbI2 templates, the inverted planar perovskite solar cells based on films with appropriate Br incorporation (CH3NH3Br/CH3NH3I mole ratio = 3/7) showed a photovoltaic conversion efficiency (PCE) of 14.9%, and the stability of the devices in air was elevated. Consequently, the high-quality CH3NH3PbBrXI3-X films can be obtained with porous PbI2 templates for improving the performance of the perovskite solar cells.

In this paper, the CH3NH3PbI3−xBrx films with various Br-doping contents were successfully prepared by solution processed deposition and followed by annealing process. This method simultaneously modified the morphology and composition of the CH3NH3PbI3 film. The effects of annealing treatment of CH3NH3PbI3−xBrx films under N2 and DMSO conditions on the microstructure of films and photoelectric properties of the solar cells were systematically investigated. The relationship of the component ratio of RBr/I= CH3NH3PbI3−xBrx/CH3NH3PbI3 in the resulting perovskite versus CH3NH3Br concentration also was explored. The results revealed that the CH3NH3PbI3−xBrx films annealed under DMSO exhibited increased grain sizes, enhanced crystallinity, enlarged bandgap and reduced defect density compared with that of the N2 annealing. It also was found that the RBr/I linearly increased in the resulting perovskite with the increased of CH3NH3Br concentration in the methylammonium halide mixture solutions. Furthermore, the photovoltaic performances of devices fabricated using DMSO precursor solvent were worse than that of DMF under N2 annealing atmosphere. When CH3NH3Br concentration was 7.5 mg ml−1, the planar perovskite solar cell based on CH3NH3PbI3−xBrx annealed under DMSO showed the best efficiency of 13.7%.

Phosphorus doped Si nanocrystals (SNCs) emebedded in silicon-rich SiNx:H films were prepared using plasma enhanced chemical vapor deposition technique, and the effects of nitrogen incorporation on the microstructure and electronic properties of the thin films have been systematically studied. Transmission electron microscope and Raman observation revealed that nitrogen incorporation prevents the growth of Si nanocrystals, and that their sizes can be adjusted by varying the flow rate of NH3. The reduction of photoluminescence (PL) intensity in the range of 2.1–2.6 eV of photon energy was observed with increasing nitrogen impurity, and a maximal PL intensity in the range 1.6–2.0 eV was obtained when the incorporation flow ratio NH3/(SiH4+H2+PH3) was 0.02. The conductivity of the films is improved by means of proper nitrogen impurity doping, and proper doping causes the interface charge density of the heterojunction (H-J) device to be lower than the nc-Si:H/c-Si H-J device. As a result, the proper incorporation of nitrogen could not only reduce the silicon banding bond density, but also fill some carrier capture centers, and suppress the nonradiative recombination of electrons.