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Tungsten doped stannic oxide transparent conductive thin films (W-doped SnO 2) have been prepared via a solution process. We use stannous chloride, preoxotungstic acid (PTA), hydrogen peroxide and anhydrous ethanol to prepare precursor solution which is stable and colorless. By investigating the effects of tungsten doping ratio and annealing temperature on properties of tungsten doped stannic oxide films, it is found that the amounts of pores on surface can be reduced by increasing annealing temperature. Amorphous SnO 2 begins to transform into crystalline SnO 2 when annealed at 300 °C. The resistivity of 2 at.% W-doped SnO 2 achieves 2.94 × 10−2 Ω cm annealed in air at 500 °C. The transmittance of W-doped SnO 2 films (around 87%) is better than that of pure SnO 2 films (around 83%) in visible range contrasted with blank quartz glass. The optical band gaps of both doped and pure SnO 2 films are over 3.7 eV. • The preoxotungstic acid is used as the dopant for preparing W-doped SnO 2 film. • Adding H 2 O 2 to achieve uniform dissolution of preoxotungstic acid in precursor. • Introducing W6+ into SnO 2 lattice enhances the transmittance and conductivity. • The transmittance of W-doped SnO 2 films is around 87%. • The most efficient doping ratio is 2 at.%. [ABSTRACT FROM AUTHOR]

In this paper, bottom-gate inverted-staggered Ga doped ZnO (GZO) thin film transistors were fabricated by pulsed laser deposition (PLD) at room temperature, and all of results demonstrated that the oxygen pressure has a huge effect on the electrical properties of the device during the preparation of the active layer. As the oxygen pressure increases from 0 Pa to 1.6 Pa, the performances of the TFTs increase first and then decrease. And GZO-TFTs exhibit the best properties with a μ sat of 12.32 cm2/V·s, an I on /I off of 9.17 × 106, a V th of 4.93 V, and a SS of 1.53 V/decade when oxygen pressure is 1.0 Pa. The GZO films were characterized by XPS, XRD, AFM to investigate this phenomenon. The XPS spectra of O 1s and Ga 2p indicated that moderate oxygen can improve the quality of GZO films due to the filled oxygen vacancies, but excess oxygen will bring out the receptor complexes and weaken the performance of TFTs. Furthermore, the best GZO film is amorphous and has a low roughness of 0.78 nm. GZO-TFT has a great potential in the large-area preparation. • Thin film transistors have been prepared by PLD at room temperature with Ga doped ZnO (GZO) active layer. • As the oxygen pressure increases, the performance of the TFT rises first and then decreases. • The properties of GZO films are characterized by a series of methods in order to to explore the mechanism of oxygen pressure. • The active layer is amorphous and has a low roughness of 0.78 nm. [ABSTRACT FROM AUTHOR]