1. Vortex creep and critical current densitiesJcin a 2μm thick SmBa2Cu3O7−dcoated conductor with mixed pinning centers grown by co-evaporation
- Author
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Hong-Soo Ha, Yates Coulter, Federico Golmar, Adriana M. Condó, Seung-Hyun Moon, Nestor Fabian Haberkorn, and Pablo Nicolás Granell
- Subjects
Materials science ,Ciencias Físicas ,Evaporation ,Flux ,02 engineering and technology ,01 natural sciences ,0103 physical sciences ,Materials Chemistry ,Electrical and Electronic Engineering ,010306 general physics ,COATED CONDUCTORS ,GLASSY EXPONENTS ,Condensed matter physics ,Relaxation (NMR) ,Metals and Alloys ,VORTEX DYNAMICS ,Atmospheric temperature range ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Magnetic field ,Vortex ,Conductor ,Astronomía ,Creep ,Ceramics and Composites ,0210 nano-technology ,CIENCIAS NATURALES Y EXACTAS - Abstract
We report the critical current densities Jc and flux creep rates in a 2 mm thick SmBa2Cu3O7-dcoated conductor produced by co-evaporation. The sample presents strong pinning produced by correlated disorder (boundaries between growth islands, dislocations and twin boundaries) as well as random nanoparticles. Correlated pinning along the c- axis was evidenced due to the appearance of a large peak in the angular critical current, centred at H ║ c. The analysis of the critical current density Jc (with the magnetic field applied parallel (H║c) and at 45° of the c-axis (H║45°)) indicates that correlated disorder assists pinning throughout the temperature range. For all temperatures and at both angles the in-field dependence of Jc exhibits a power-law behavior. The contribution of correlated disorder drops when the field is rotated to intermediate angles between the c axis and a-b axis (i. e. H║45°), which derives in a reduction of the absolute Jc value and poorer in-field dependences. The flux creep rate depends on the angle and its values remain approximately constant within 2 the power-law regime. For H║c and H║45° and for magnetic fields lower than 20 kOe, the flux relaxation presents characterizing glassy exponents u = 1.70 and u =1.32, respectively. Fil: Haberkorn, Nestor Fabian. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Area de Investigación y Aplicaciones No Nucleares. Gerencia de Física (Centro Atómico Bariloche); Argentina Fil: Coulter, Y.. Los Alamos National High Magnetic Field Laboratory; Estados Unidos Fil: Condo, Adriana Maria. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Area de Investigación y Aplicaciones No Nucleares. Gerencia de Física (Centro Atómico Bariloche); Argentina Fil: Granell, Pablo Nicolás. Instituto Nacional de Tecnología Industrial. Centro de Micro y Nanoelectrónica del Bicentenario; Argentina Fil: Golmar, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Instituto Nacional de Tecnología Industrial. Centro de Micro y Nanoelectrónica del Bicentenario; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina Fil: Ha, H. S.. Korea Electrotechnology Research Institute; Corea del Norte Fil: Moon, S. H.. SuNAM Co; Corea del Norte
- Published
- 2016
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