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6. Magnetization Switching in Atom-Thick Mo Engineered Exchange Bias-Based SOT-MRAM

Author

Zhao, Dongyan, Chen, Yanning, Chen, Zanhong, Pan, Cheng, Shao, Jin, Du, Ao, Cai, Wenlong, Cao, Kaihua, Fu, Zhen, and Shi, Kewen

Abstract

The manipulation and detection of antiferromagnetic (AFM) in exchange bias (EB)-based MRAM using spin-orbit torque (SOT) holds promise for developing highly reliable and ultrafast spintronic memory devices. However, the high switching current induced by the SOT-induced EB field remains a major drawback. Additionally, the mechanism behind the interaction between the EB field and the SOT remains unclear. To address this issue, we have introduced a thin layer of Mo between the AFM and ferromagnetic-free layers to tune the EB field and study the SOT-induced switching properties. Our findings indicate that when the SOT is dominant during short pulses of a few nanoseconds, Mo insertion can significantly reduce the EB field and decrease the SOT switching current, leading to a reduction in power consumption of these memories. This approach could open up new possibilities for optimizing EB-MRAM and improving our understanding of AFM electronics.

Published
2024
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