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In this study, Monte Carlo investigation delves into the dielectric features of silicene–germanene nanosystem with junction connection. We emphasized the profound influence of physical parameters, coupling between Si–Si and Ge–Ge atoms and temperature, on these dielectric features. Our results highlight the pivotal role of the coupling parameter between Ge atoms in influencing blocking temperatures, underlining the significance of high values for spin and coupling parameters for achieving a high blocking temperature and delaying transitions. Furthermore, our analysis of electric hysteresis loops demonstrates their sensitivity to parameter variations, which can offer valuable insights for nanoelectronics and materials science applications.

The dielectric properties of a mixed Zethrene-inspired nanoscale system (SiZ-1, σkZ-5/2) have been analyzed in detail using the Monte Carlo approach (MCa) in this study. First, the most stable configurations in different planes were investigated. Then, the influences of the physical factors, namely the coupling interaction factor, on the thermal behaviors of the polarization and the susceptibility of the studied nanostructure have been examined for nonzero temperatures and fixed external electric field values. It was found that the obtained transition temperature point relies weakly on the coupling interaction. Finally, the effects of the physical factors on the electric hysteresis cycles were discussed.

A monolayer anthracene-like nanostructure was investigated through Monte Carlo simulations to determine its compensation temperature and magnetic hysteresis cycle. Also, the effects of exchange coupling on compensation and transition temperatures were discussed. Additionally, the magnetic hysteresis cycles and magnetic coercive field as well as the surface of multi-loop hysteresis were studied with respect to strong exchange coupling and temperature parameters. This study discusses the behavior of multi-loop hysteresis in multi-state memories and nanotechnology.