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Fe x Al 1-x thin films had been prepared on Si (100) substrates by electron beam evaporation. The substrate temperature was varied from room temperature to 450°C at an interval of 100°C. The crystalline orientation of deposited Fe x Al 1-x thin films had been characterized by X-ray diffraction (XRD) and the thickness was measured by Atomic profiler. The results show that the crystalline orientation of Fe x Al 1-x thin films depends on the substrate temperature. The thin films are crystal at different substrate temperatures. The deposition rate becomes bigger from 30°C to 250°C and smaller from 250°C to 450°C. The surface morphology of deposited Fe x Al 1-x thin films had been investigated by atomic force microscopy (AFM). The results show that the surface roughness increases with increasing the substrates temperature to 450°C.

In this paper, Fe X Al 1-X films have been deposited on silicon substrates using electron beam evaporation, which have been not reported to prepare Fe X Al 1-X films before. Subsequently, the films were annealed in vacuum better than 3×10 -4 Pa for 1 hour at 100°C, 280°C, 330°C, 450°C and 500°C, respectively. Electrical resistivities of the samples were been measured by four point probe, and microstructures of the samples were characterized by X-ray diffraction(XRD). The results show that, the resistivity of films reduces gradually with increasing of the annealing temperature, and the structure of films can be improved after annealing. In addition, the resistivity of film reduces gradually with increasing thickness and comes closed to the that of bulk when the film thickness becomes thicker than 100nm.