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We investigate experimentally resonant-tunnelling-diode (RTD) oscillators, which are based on RTDs with heavily doped collector. We demonstrate that such RTD oscillators can work at frequencies, which are far beyond the limitations imposed by resonant-state lifetime and relaxation time. Exploiting further such RTDs, we have achieved the record operating frequency of 1.1 THz and show that substantially higher frequencies should be also achievable with RTD oscillators. RTD oscillators are extremely compact (less than a square millimeter) room-temperature sources of coherent cw THz radiation. Such sources should enable plenty of real-world THz applications.

We are developing a photonic wire evanescent field (PWEF) sensor chip using 260 nm x 450 nm cross-section silicon photonic wire waveguides. The waveguide mode is strongly localized near the silicon surface, so that light interacts strongly with molecules bound to the waveguide surface. The millimeter long sensor waveguides can be folded into tight spiral structures less than 200 micrometers in diameter, which can be arrayed at densities up to ten or more independent sensors per square millimeter. The long propagation length in each sensor element gives a response to molecular binding much better than currently available tools for label-free molecular sensing. Cost of instrumentation, cost per measurement, ease-of-use, and the number of sensors that can be simultaneously monitored on a sensor array chip are equally important in determining whether an instrument is practical for the end user and hence commercially viable. The objective of our recent work on PWEF sensor array chips and the associated instrumentation is to address all of these issues. This conference paper reviews our ongoing work on the photonic wire sensor chip design and layout, on-chip integrated fluidics, optical coupling, and chip interrogation using arrays of grating couplers formed using sub-wavelength patterned structures. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE)., SPIE BiOS, January 22-23, 2011, San Francisco, CA, USA, Series: Proceedings of SPIE; no. 7888

The subject matter of this presentation is to review the results of a research program whose objective is the development of a technology for the serial manufacturing of high efficiency HOE (Holographic Optical Elements) with predetermined spectral characteristics and angular selectivity with apertures ranging from few square millimeters to square meters. The developed technology includes the machine fabrication of precision holographic films (2 to 50 micron thickness) on glass or plastic substrata and chemically and thermally adapted hologram development processes. The desired optical properties of the holographic material for a specific technical application are preset during the making of the film and are modified during the exposure and the development of the HOE.