1. Holistic lithography for EUV: NXE:3100 characterization of first printed wafers using an advanced scanner model and scatterometry
- Author
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Rudy Peeters, Keith Gronlund, S. N. Kang, K. van Ingen-Schenau, Jeong-ho Yeo, Joerg Zimmermann, Insung Kim, Natalia Davydova, Oliver Schumann, Christian Wagner, Hua-yu Liu, Dorothe Oorschot, Frank A. J. M. Driessen, Vidya Vaenkatesan, Hoyoung Kang, Jiong Jiang, and Y. Lee
- Subjects
Engineering drawing ,Scanner ,Engineering ,business.industry ,Extreme ultraviolet lithography ,Computer data storage ,Reticle ,Wafer ,Photomask ,business ,Lithography ,Computer hardware ,Flash memory - Abstract
In this paper we will present ASML's holistic approach to lithography for EUV. This total approach combines the various components needed to achieve the correct on-product demands of our customers in terms of patterning fidelity across the entire image field and across the entire wafer. We will start giving a general update on ASML's NXE scanner platform of which the 6 th NXE:3100 systems is now being shipped to a leading chipmaker. The emphasis will be on wafer imaging results for various applications such as flash memory and logic's SRAM. Then we will describe the second holistic component, NXE-computational lithography, which was developed to speed-up early learning on EUV and to achieve high accuracy on the wafers. Thirdly, the YieldStar angular-resolved scatterometry tool that supports the scanner's stability was used to characterize the system and calibrate the models. The wafer-results reveal in detail predicted imaging effects of NXE lithography and allow a calibration of system parameters and characterization of hardware components. We will demonstrate mask-induced imaging effects and propose an improvement of the current EUV blank or mask-making processes.
- Published
- 2011
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