1. 8 Gb/s 0.5 V integrated Ge-on-SOI photodetector
- Author
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Eric Cassan, Laurent Vivien, Rolf Kaufmann, Giovanni Isella, Daniel Chrastina, Paul Crozat, Delphine Marris-Morini, G. Rasigade, Johann Osmond, Hans von Känel, and Suzanne Laval
- Subjects
Optics ,Materials science ,business.industry ,Reverse bias ,law ,PIN diode ,Optoelectronics ,Silicon on insulator ,Photodetector ,business ,Dark current ,law.invention - Abstract
A vertically illuminated photodetector based on Ge-on-SOI, which operates at 8 Gb/s for reverse bias as low as 0.5 V, is presented. The integrated photodetector also features low dark current and good photogenerated carrier collection efficiency.
- Published
- 2009
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