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A key stage in production of the integrated optics devices is forming of microtopography on crystalline films. The current methods generally comprise two separate steps: producing of thin film and creation a topographical pattern on it. But the inherently large chemical stability of crystalline LiNbO3 has effectively precluded the use of standard photolithographic patterning techniques. We present new approach based on the modified sol-gel technology using the photosensitive gel. In this case, the photolithography is used on the stage of dried gel whereupon the direct crystallization of patterned precursor film allows to create integrated optical element without subsequent etching of crystalline film. Presented method of patterned thin film preparation involves synthesis of photo-reactive complex of metal, which undergoes change under the UV light. This technology has allowed to obtain first samples of different types of waveguide devices.

Monocrystalline c-axis oriented thin films of PbTiO3 with various hole concentration were prepared by Cu doping with 0.1, 0.5, 1.0 mas.% and substituting Zr for Ti (Zr:Ti equals 52:48). We report concentration-dependent far- and mid- infrared reflectivity spectra of these compounds focusing on the electronic properties. Optical functions (e 1, e 2, σ , -Im e -1) have been analyzed by Kramers-Kronig transformation to reflectivity spectra measured in a frequency range of 200 - 10000 cm-1 at room temperature. Conductivity spectra show a complete semiconducting dependence that can be analyzed by Drude-Lorentz model and in the terms of dynamic interaction, which leads to a frequency dependent scattering rate and enhanced low-frequency carrier mass 0.5 mas.% Cu in PbTiO3 decreases effective mass from 3.5 to 1.5 near 200 cm-1 and increases relaxation time as compared with the undoped sample.© (1999) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.