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Today’s InGaN-based white LEDs still suffer from a significant efficiency reduction at elevated current densities, the so-called “Droop”. Core-shell microrods, with quantum wells (QWs) covering their entire surface, enable a tremendous increase in active area scaling with the rod’s aspect ratio. Enlarging the active area on a given footprint area is a viable and cost effective route to mitigate the droop by effectively reducing the local current density. Microrods were grown in a large volume metal-organic vapor phase epitaxy (MOVPE) reactor on GaN-on-sapphire substrates with a thin, patterned SiO2 mask for position control. Out of the mask openings, pencil-shaped n-doped GaN microrod cores were grown under conditions favoring 3D growth. In a second growth step, these cores are covered with a shell containing a quantum well and a p-n junction to form LED structures. The emission from the QWs on the different facets was studied using resonant temperature-dependent photoluminescence (PL) and cathodoluminescence (CL) measurements. The crystal quality of the structures was investigated by transmission electron microscopy (TEM) showing the absence of extended defects like threading dislocations in the 3D core. In order to fabricate LED chips, dedicated processes were developed to accommodate for the special requirements of the 3D geometry. The electrical and optical properties of ensembles of tens of thousands microrods connected in parallel are discussed.

The controlled growth of highly n-doped GaN micro rods is one of the major challenges in the fabrication of recently developed three-dimensional (3D) core-shell light emitting diodes (LEDs). In such structures with a large active area, higher electrical conductivity is needed to achieve higher current density. In this contribution, we introduce high quality heavily-doped GaN:Si micro-rods which are key elements of the newly developed 3D core-shell LEDs. These structures were grown by metal-organic vapor phase epitaxy (MOVPE) using selective area growth (SAG). We employed spatially resolved micro-Raman and micro-photoluminescence (PL) in order to directly determine a free-carrier concentration profile in individual GaN micro-rods. By Raman spectroscopy, we analyze the low-frequency branch of the longitudinal optical (LO)-phonon-plasmon coupled modes and estimate free carrier concentrations from ≈ 2.4 × 1019 cm−3 up to ≈ 1.5 × 1020 cm-3. Furthermore, free carrier concentrations are determined by estimating Fermi energy level from the near band edge emission measured by low-temperature PL. The results from both methods reveal a good consistency.

Silicon microprobe tips are fabricated and integrated with piezoresistive cantilever sensors for high-speed surface roughness scanning systems. The fabrication steps of the high-aspect-ratio silicon microprobe tips were started with photolithography and wet etching of potassium hydroxide (KOH) resulting in crystal-dependent micropyramids. Subsequently, thin conformal wear-resistant layer coating of aluminum oxide (Al 2 O 3 ) was demonstrated on the backside of the piezoresistive cantilever free end using atomic layer deposition (ALD) method in a binary reaction sequence with a low thermal process and precursors of trimethyl aluminum and water. The deposited Al 2 O 3 layer had a thickness of 14 nm. The captured atomic force microscopy (AFM) image exhibits a root mean square deviation of 0.65 nm confirming the deposited Al 2 O 3 surface quality. Furthermore, vacuum-evaporated 30-nm/200-nm-thick Au/Cr layers were patterned by lift-off and served as an etch mask for Al 2 O 3 wet etching and in ICP cryogenic dry etching. By using SF 6 /O 2 plasma during inductively coupled plasma (ICP) cryogenic dry etching, micropillar tips were obtained. From the preliminary friction and wear data, the developed silicon cantilever sensor has been successfully used in 100 fast measurements of 5- mm-long standard artifact surface with a speed of 15 mm/s and forces of 60–100 μN. Moreover, the results yielded by the fabricated silicon cantilever sensor are in very good agreement with those of calibrated profilometer. These tactile sensors are targeted for use in high-aspect-ratio microform metrology.

Energy conversion technologies are aiming to extremely high power capacities per year. Nontoxicity and abundance of the materials are the key requirements to a sustainable photovoltaic technology. Oxides are among the key materials to reach these goals. We investigate the influence of thin buffer layers on the performance of an ZnO:Al/buffer/Cu2O solar cells. Introduction of a thin ZnO or Al2O3 buffer layer, grown by thermal ALD, between ZnO:Al and Cu2O resulted in 45% increase of the solar cell efficiency. VPE growth of Cu2O employing elemental copper and pure oxygen as precursor materials is presented. The growth is performed on MgO substrates with the (001) orientation. On- and off- oriented substrates have been employed and the growth results are compared. XRD investigations show the growth of the (110) oriented Cu2O for all temperatures, whereas at a high substrate temperature additional (001) Cu2O growth occurs. An increase of the oxygen partial pressure leads to a more pronounced 2D growth mode, whereby pores between the islands still remain. The implementation of off-axis substrates with 3.5° and 5° does not lead to an improvement of the layer quality. The (110) orientation remains predominant, the grain size decreases and the FWHM of the (220) peak increases. From the AFM images it is concluded, that the (110) surface grows with a tilt angle to the substrate surface.

The development of low-cost and low-power MEMS-based cantilever sensors for possible application in hand-held airborne ultrafine particle monitors is described in this work. The proposed resonant sensors are realized by silicon bulk micromachining technology with electrothermal excitation, piezoresistive frequency readout, and electrostatic particle collection elements integrated and constructed in the same sensor fabrication process step of boron diffusion. Built-in heating resistor and full Wheatstone bridge are set close to the cantilever clamp end for effective excitation and sensing, respectively, of beam deflection. Meanwhile, the particle collection electrode is located at the cantilever free end. A 300 μm-thick, phosphorus-doped silicon bulk wafer is used instead of silicon-on-insulator (SOI) as the starting material for the sensors to reduce the fabrication costs. To etch and release the cantilevers from the substrate, inductively coupled plasma (ICP) cryogenic dry etching is utilized. By controlling the etching parameters (e.g., temperature, oxygen content, and duration), cantilever structures with thicknesses down to 10 - 20 μm are yielded. In the sensor characterization, the heating resistor is heated and generating thermal waves which induce thermal expansion and further cause mechanical bending strain in the out-of-plane direction. A resonant frequency of 114.08 ± 0.04 kHz and a quality factor of 1302 ± 267 are measured in air for a fabricated rectangular cantilever (500x100x13.5 μm3). Owing to its low power consumption of a few milliwatts, this electrothermal cantilever is suitable for replacing the current external piezoelectric stack actuator in the next generation of the miniaturized cantilever-based nanoparticle detector (CANTOR).

A closed loop circuit capable of tracking resonant frequencies for MEMS-based piezoresistive cantilever resonators is developed in this work. The proposed closed-loop system is mainly based on a phase locked loop (PLL) circuit. In order to lock onto the resonant frequency of the resonator, an actuation signal generated from a voltage-controlled oscillator (VCO) is locked to the phase of the input reference signal of the cantilever sensor. In addition to the PLL component, an instrumentation amplifier and an active low pass filter (LPF) are connected to the system for gaining the amplitude and reducing the noise of the cantilever output signals. The LPF can transform a rectangular signal into a sinusoidal signal with voltage amplitudes ranging from 5 to 10 V which are sufficient for a piezoactuator input (i.e., maintaining a large output signal of the cantilever sensor). To demonstrate the functionality of the system, a self-sensing silicon cantilever resonator with a built-in piezoresistive Wheatstone bridge is fabricated and integrated with the circuit. A piezoactuator is utilized for actuating the cantilever into resonance. Implementation of this closed loop system is used to track the resonant frequency of a silicon cantilever-based sensor resonating at 9.4 kHz under a cross-sensitivity test of ambient temperature. The changes of the resonant frequency are interpreted using a frequency counter connected to the system. From the experimental results, the temperature sensitivity and coefficient of the employed sensor are 0.3 Hz/°C and 32.8 ppm/°C, respectively. The frequency stability of the system can reach up to 0.08 Hz. The development of this system will enable real-time nanoparticle monitoring systems and provide a miniaturization of the instrumentation modules for cantilever-based nanoparticle detectors.

Vertical silicon nanowire (SiNW) resonators are designed and fabricated in order to assess exposure to aerosol nanoparticles (NPs). To realize SiNW arrays, nanolithography and inductively coupled plasma (ICP) deep reactive ion etching (DRIE) at cryogenic temperature are utilized in a top-down fabrication of SiNW arrays which have high aspect ratios (i.e., up to 34). For nanolithography process, a resist film thickness of 350 nm is applied in a vacuum contact mode to serve as a mask. A pattern including various diameters and distances for creating pillars is used (i.e., 400 nm up to 5 μm). In dry etching process, the etch rate is set high of 1.5 μm/min to avoid underetching. The etch profiles of Si wires can be controlled aiming to have either perpendicularly, negatively or positively profiled sidewalls by adjusting the etching parameters (e.g., temperature and oxygen content). Moreover, to further miniaturize the wire, multiple sacrificial thermal oxidations and subsequent oxide stripping are used yielding SiNW arrays of 650 nm in diameter and 40 μm in length. In the resonant frequency test, a piezoelectric shear actuator is integrated with the SiNWs inside a scanning electron microscope (SEM) chamber. The observation of the SiNW deflections are performed and viewed from the topside of the SiNWs to reduce the measurement redundancy. Having a high deflection of ~10 μm during its resonant frequency of 452 kHz and a low mass of 31 pg, the proposed SiNW is potential for assisting the development of a portable aerosol resonant sensor.

We present a computational study on the anisotropic luminescence and the efficiency of a core-shell type nanowire LED based on GaN with InGaN active quantum wells. The physical simulator used for analyzing this device integrates a multidimensional drift-diffusion transport solver and a k · p Schr¨odinger problem solver for quantization effects and luminescence. The solution of both problems is coupled to achieve self-consistency. Using this solver we investigate the effect of dimensions, design of quantum wells, and current injection on the efficiency and luminescence of the core-shell nanowire LED. The anisotropy of the luminescence and re-absorption is analyzed with respect to the external efficiency of the LED. From the results we derive strategies for design optimization.

Nanoparticles are easily attracted by surfaces. This sticking behavior makes it difficult to clean contaminated samples. Some complex approaches have already shown efficiencies in the range of 90%. However, a simple and cost efficient method was still missing. A commonly used silicone for soft lithography, PDMS, is able to mold a given surface. This property was used to cover surface-bonded particles from all other sides. After hardening the PDMS, particles are still embedded. A separation of silicone and sample disjoins also the particles from the surface. After this procedure, samples are clean again. This method was first tested with carbon particles on Si surfaces and Si pillar samples with aspect ratios up to 10. Experiments were done using 2 inch wafers, which, however, is not a size limitation for this method.

For future measurements while depth drilling, commercial sensors are required for a temperature range from -40 up to 300 °C. Conventional piezoresistive silicon sensors cannot be used at higher temperatures due to an exponential increase of leakage currents which results in a drop of the bridge voltage. A well-known procedure to expand the temperature range of silicon sensors and to reduce leakage currents is to employ Silicon-On-Insulator (SOI) instead of standard wafer material. Diffused resistors can be operated up to 200 °C, but show the same problems beyond due to leakage of the p-njunction. Our approach is to use p-SOI where resistors as well as interconnects are defined by etching down to the oxide layer. Leakage is suppressed and the temperature dependence of the bridges is very low (TCR = (2.6 ± 0.1) μV/K@1 mA up to 400 °C). The design and process flow will be presented in detail. The characteristics of Wheatstone bridges made of silicon, n- SOI, and p-SOI will be shown for temperatures up to 300 °C. Besides, thermal FEM-simulations will be described revealing the effect of stress between silicon and the silicon-oxide layer during temperature cycling.

Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

A silicon cantilever with slender geometry based Micro Electro Mechanical System (MEMS) for nanoparticles mass detection is presented in this work. The cantilever is actuated using a piezoactuator at the bottom end of the cantilever supporting frame. The oscillation of the microcantilever is detected by a self-sensing method utilizing an integrated full Wheatstone bridge as a piezoresistive strain gauge for signal read out. Fabricated piezoresistive cantilevers of 1.5 mm long, 30 μm wide and 25 μm thick have been employed. This self-sensing cantilever is used due to its simplicity, portability, high-sensitivity and low-cost batch microfabrication. In order to investigate air pollution sampling, a nanoparticles collection test of the piezoresistive cantilever sensor is performed in a sealed glass chamber with a stable carbon aerosol inside. The function principle of cantilever sensor is based on detecting the resonance frequency shift that is directly induced by an additional carbon nanoparticles mass deposited on it. The deposition of particles is enhanced by an electrostatic field. The frequency measurement is performed off-line under normal atmospheric conditions, before and after carbon nanoparticles sampling. The calculated equivalent mass-induced resonance frequency shift of the experiment is measured to be 11.78 ± 0.01 ng and a mass sensitivity of 8.33 Hz/ng is obtained. The proposed sensor exhibits an effective mass of 2.63 μg, a resonance frequency of 43.92 kHz, and a quality factor of 1230.68 ± 78.67. These results and analysis indicate that the proposed self-sensing piezoresistive silicon cantilever can offer the necessary potential for a mobile nanoparticles monitor.

We achieved to etch nano- and deep structures in silicon using ICP-cryogenic dry etching process. We etched nanopores and nanocantilevers with an etch rate of 13 nm/min, nanopillars with an etch rate of 2.8 μm/min - 4.0 μm/min, membrane and cantilever structures with an etch rate of 4 μm/min and 3 μm/min, respectively. Nanopores and nanocantilevers are interesting structures for Bionanoelectronics. Nanopillars can be used as substrates/templates for the MOCVD growth of GaN nanoLEDs. They are the basic constituents of a nanoparticle balance and also of a thermoelectric generator. For the joining of the silicon wafers of the thermoelectric generator the low temperature joining technique can be used. Cantilevers can be used for sensing, e.g. as tactile cantilevers. They can be used also as resonator for mass sensing even in the subnanogram region. The actuation of the resonator can be done by using piezoelectric thin films on the cantilevers. The mass detection depends on the resonance frequency shift caused by loaded mass on the cantilevers. Such cantilevers are robust and easy to produce. The deep etching in silicon was done by using a photoresist mask and creating perpendicular and smooth sidewalls.

An optically pumped ZnO distributed feedback laser operating at 383 nm has been designed, fabricated and characterized. Single mode operation was observed for a wide temperature range between 10 and 270 K. In order to avoid technologically difficult etching of ZnO, a 3rd order diffraction grating was dry-etched into an additional 120 nm-thick Si 3 N 4 layer deposited on the ZnO active region. The spectral linewidth of the laser emission was 0.4 nm, whereas an optical pump threshold intensity of 0.12 MW/cm 2 and a peak output power of 14 mW were seen. The temperature tuning coefficient of the ZnO refractive index was determined from wavelength vs. temperature measurements; a value of 9 × 10 -5 K -1 was found, in good agreement with literature values.

Optical properties of ZnO doped with Mn and V were studied. Zn(Mn)O layers were grown by peroxide MBE, and Zn(V)O was prepared by high-dose ion implantation of bulk ZnO prepared by hydrothermal technique. The Zn(Mn)O layers containing up to 50% of Mn were characterized by high-resolution x-ray diffraction, photoluminescence, and optical absorption. A blue shift of the band edge revealed from optical absorption measurements points to the incorporation of at least a part of Mn atoms on the lattice sites. An increase in the Zn(Mn)O band gap and an enhancement of the broad below band gap absorption associated with Mn ions were observed with increasing Mn composition. Correlating structural and optical transmission data, we suggest that the band edge of Zn(Mn)O rises linearly with the amount of Mn ions substituting Zn on the lattice sites. Photoluminescence of ZnO moderately doped with Mn shows several emission lines (the strongest ones are located at 3.34 and 3.36 eV). Surprisingly, no shift in the near-band-edge emission (3.36 eV) was detected in the photoluminescence data. Photoluminescence excitation studies revealed that the near-band-edge peak and the peak centered around 3.34 eV have different origin. Most probably, the second line is due to Mn intracenter transitions. Photoluminescence studies of ZnO bulk samples implanted with V + have revealed that thermal annealing at 800 °C restores to a large extent the optical quality of the material. A new emission line centered at 3.307 eV has been found in the photoluminescence spectrum of the highly conductive samples implanted with a V dose of 1 × 10 16 cm -2 .

Spectral response of lateral optical anisotropy of periodic undoped type-II ZnSe/BeTe heterostructures with nonequivalent interfaces has been studied by spectroscopic ellipsometry. The spectra revealed two types of features corresponding to optical transitions with energies lying in the bandgap. The position of features of the first type does not depend on the heterostructure period. Features of the second type shift toward lower energies with decreasing period of the heterostructure. This behavior is explained in terms of a model taking into account the existence of electronic and hole interface states, as well as of a mixed-type interface state.

The observation of optical gain at the trion transition of n-doped ZnSe quantum wells is reported. The specific optical coupling between the trion and electron band gives rise to stimulated emission on the low-energy wing of the trion photoluminescence band without degeneracy and inversion in the total particle numbers. Gain values as large as 10 4 cm -1 are found for excitation intensities of some kW/cm 2 . A calculation of the absorption-gain crossover photon energy based on a kinetically determined equilibrium of excitons, trions and electrons with a common carrier gas temperature describes the experimental data well.

Ferromagnetic Ga1-xMnxAs films containing up to 5.1 at%Mn were grown by low-temperature MBE. The structural, electrical, and magnetic properties of the layers are reported. At x > 0.01, the materials show a ferromagnetic behavior. The Curie temperature reaches 80 K at 5.1at% Mn. We propose the use of a n+-GaAs/p+-GaMnAs Esaki-diode (ferromagnetic Esaki-diode, FED) to provide injection of spin-polarized electrons via interband tunneling. Under reverse bias, spin-polarized electrons at the Fermi level in the valence band of GaMnAs tunnel to the conduction band of GaAs in contrast to the injection of spin-polarized holes used before.© (2002) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

We report a pronounced effect on an additional hole confinement in the electron Coulomb potential on giant splitting and oscillator strengths of the exciton Zeeman patterns in CdTe/(Cd,Mn)Te quantum well structures. Measuring oscillator strength and Zeeman splitting as a function of the quantum well width and/or an external magnetic field by resonance reflection spectroscopy we demonstrate the transition from a hole subjected to a net potential well to that confined to the electron Coulomb potential occurring in quantum wells thicker than 30 angstroms. This transition is also found in superlattices where the electron wave function changes its character from three- to two-dimensional with an increase of the superlattices period. Analyzing the magnetooptical data taken above and below the transition we find the hole confinement in the electron Coulomb potential to decrease a hole wave function penetration into semimagnetic barriers to decrease the strength of the exchange interaction of holes with magnetic ions.© (1992) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

Interest in CdTe field effect transistors and multi-gated devices stems from the fact that CdTe is lattice matched to HgCdTe. As a consequence it may be possible to develop a monolithic technology that combines HgCdTe infrared focal plane arrays with on-board signal processing based on CdTe devices. Although CdTe metal-semiconductor field effect transistors have only recently been fabricated rapid improvement in device performance has been achieved. All the devices reported have been fabricated from CdTe:In epilayers grown by Photoassisted Molecular Beam Epitaxy. We report on devices having gold Schottky barrier with reverse breakdown voltages as high as 28. 0 V and ideality factors near 1. 7. These MESFETs exhibit good depleting mode action.