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A comparative study is performed of Schottky barrier structures based on Si and GaAs as photoelements and detectors of electrons with energies of 40 and 60 keV. It is shown that introduction of a dielectric interlayer between the metal and semiconductor 1.5–3 nm thick permits increase in ic and Vx of the structures in both the photodetector and electron count regimes. A complex temperature dependence of structure properties in the electron count regime was found, depending on barrier metal thickness and electron energy.

A theoretical analysis is performed herein of the spectrum sensitivity of a solar cell with a metal-tunnel dielectric-semiconductor structure on the properties of the interfacial boundaries and conditions for maximal collection of charge by the photocarriers are determined. The photosensitivity of structures with different tunnel-dielectric thickness is measured experimentally in a broad spectrum range. Comparison of the computed and experimental dependences permitted proving the influence of departure of the majority charge carriers in the metal on the photosensitivity in the shortwave spectrum band and also determining certain contact parameters governing the structure photosensitivity, and therefore, the efficiency of the solar cells.

Comparative studies, by the method of IR spectroscopy, of the reflection-absorption properties of oxide layers and the electrophysical characteristics of Ti-SiOx-Si contacts were performed. It is shown that electron-beam deposition of Ti on a heated SiOx-Si substrate gives a thinner layer of silicon oxide and leads to the formation of titanium oxide at the interface. The changes observed, based on the IR spectra, in the properties of the oxide layers as a function of the substrate temperature and the method of oxidation permit drawing conclusions regarding the predominant mechanisms for the passage of majority and minority charge carriers in the contact.