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A study was made of the manufacture of plane light guides by diffusion of cadmium in plane-parallel polished monocrystalline plates of ZnSe at different cadmium vapor pressures in the ampul and different annealing times. Profiles of the refractive index in the diffusion layer of the specimens were calculated from measurements of the resonance angles associated with mode excitation. Optical transmission from 0.4 to 0.2 μm was measured for specimens obtained under different diffusion annealing conditions. A conclusion was reached as to the optimum annealing conditions.

We describe a method for growing epitaxial layers of zinc sulfide and cadmium sulfide solid solutions on the A-side of GaAs (111) by means of separated sulfide sources in an open hydrogen iodide system. The effects of substrate temperature, amount of doping from substrate elements, and source temperatures on photoluminescence from epitaxial films of ZnxCd1−xS on GaAs are determined. By varying the growth conditions it is possible to primarily obtain a single band in the emission spectrum. The presence of a larger number of photoluminescence bands indicates that the solid solution is nonhomogeneous. The composition of the solid-solution films was determined through empirical relationships based on spectra from standard solutions. X-ray analysis was used to confirm the compositions.