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Your search keyword '"Thierry Camps"' showing total 3 results
Start Over Author "Thierry Camps" Journal solid-state electronics
3 results on '"Thierry Camps"'

1. Influence of the topology on thermal dissipation in high power density GaAs devices

Author

J. Tasselli, J.P. Bailbe, P. Souverain, Thierry Camps, and A. Marty

Subjects
Materials science, Form factor (electronics), Thermal resistance, Topology optimization, Topology (electrical circuits), High power density, Condensed Matter Physics, Topology, Electronic, Optical and Magnetic Materials, Thermal dissipation, Thermal, Materials Chemistry, Sensitivity (control systems), Electrical and Electronic Engineering
Abstract

This paper presents an analysis of the influence of the active zone topology on the heat dissipation for GaAs devices. It highlights the influence of the width and the form factor on the thermal behavior of the device. It also shows the sensitivity of the thermal resistance to the increase of the dissipated power. For multi-cellular structures the impact of the thermal coupling between heat sources is studied.

Published
2002

2. Theory and experiment of the temperature dependence of GaAlAs/GaAs HBTs characteristics for power amplifier applications

Author

J. Tasselli, J.P. Bailbe, A. Cazarre, L. Andrieux, Thierry Camps, A. Marty, and H. Granier

Subjects
Power gain, Materials science, business.industry, Amplifier, Thermal resistance, Bipolar junction transistor, Condensed Matter Physics, Temperature measurement, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, chemistry, Ternary compound, Thermal, Materials Chemistry, Electronic engineering, Optoelectronics, Power semiconductor device, Electrical and Electronic Engineering, business
Abstract

Modelling of thermal effects of GaAlAs/GaAs HBTs d.c. and r.f. characteristics is presented. The thermal resistance value is determined experimentally and introduced in a model. Good agreement between measured results and those from modelling is demonstrated. The r.f. performance shows a good stability at high temperature (fmax is reduced by about 12% due to temperature rise). For the high signal mode, the simulation of a power amplifier at 3 GHz is also carried out with and without temperature effects.

Published
1995

3. Emitter excess resistance in GaAlAs/GaAs heterojunction bipolar transistors

Author

Thierry Camps, A. Cazarré, J.P. Bailbe, A. Marty, and J. Tasselli

Subjects
Materials science, Access resistance, Heterostructure-emitter bipolar transistor, business.industry, Bipolar junction transistor, Contact resistance, Electrical engineering, Heterojunction, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Inductance, chemistry.chemical_compound, chemistry, Ternary compound, Materials Chemistry, Physics::Accelerator Physics, Optoelectronics, Electrical and Electronic Engineering, business, Common emitter
Abstract

Numerous studies have shown the influence of parasitic elements, particularly emitter access resistance and inductance, on HBTs DC and dynamic performances. Instead the achievement of low specific contact resistances, the apparent emitter resistance presents high values. To explain this discrepancy the longitudinal distribution of the emitter current has been investigated by using a distributed DC-model, taking into account the metal layers resistance of the different contacts. Thus it is shown that only the emitter contact parameters act on the non equipotentiality along the structure.

Published
1994

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