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Your search keyword '"Selmi, Luca"' showing total 21 results
Start Over Author "Selmi, Luca" Journal solid-state electronics
21 results on '"Selmi, Luca"'

3. On the extraction of the channel current in permeable gate oxide MOSFETs

Author

Palestri, Pierpaolo, Esseni, David, Selmi, Luca, Guegan, G, and Sangiorgi, E.

Subjects
MOSFETs, ultra-thin oxide, gate leakage, parameter extraction, mobility extraction, Materials science, Oxide, Time-dependent gate oxide breakdown, chemistry.chemical_compound, Gate oxide, MOSFET, Materials Chemistry, Electronic engineering, Electrical and Electronic Engineering, NMOS logic, business.industry, Extraction (chemistry), Condensed Matter Physics, Electronic, Optical and Magnetic Materials, chemistry, Optoelectronics, Current (fluid), business, Communication channel
Abstract

It is a common practice to extract the channel current in permeable gate MOSFETs as the average of the source and drain currents. This paper analyzes the extraction error associated to this procedure by means of theoretical calculations, measurements in a nMOS technology with 1.5 nm oxide thickness and a simple distributed model of the permeable gate MOSFET. The main dependencies of the extraction error on the bias conditions, the oxide thickness and the channel length are discussed in detail.

Published
2004

5. Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells

Author

Zerveas, George, primary, Caruso, Enrico, additional, Baccarani, Giorgio, additional, Czornomaz, Lukas, additional, Daix, Nicolas, additional, Esseni, David, additional, Gnani, Elena, additional, Gnudi, Antonio, additional, Grassi, Roberto, additional, Luisier, Mathieu, additional, Markussen, Troels, additional, Osgnach, Patrik, additional, Palestri, Pierpaolo, additional, Schenk, Andreas, additional, Selmi, Luca, additional, Sousa, Marilyne, additional, Stokbro, Kurt, additional, and Visciarelli, Michele, additional

Published
2016
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12. Foreword

Author

Selmi, Luca, primary, Esseni, David, additional, and Palestri, Pierpaolo, additional

Published
2009
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19. The impact of interface states on the mobility and drive current of [formula omitted] semiconductor n-MOSFETs.

Author

Osgnach, Patrik, Caruso, Enrico, Lizzit, Daniel, Palestri, Pierpaolo, Esseni, David, and Selmi, Luca

Subjects
*MONTE Carlo method, *METAL oxide semiconductor field-effect transistors, *SEMICONDUCTORS, *CONDUCTION bands, *FERMI level
Abstract

Accurate Schrödinger-Poisson and Multi-Subband Monte Carlo simulations are used to investigate the effect of interface states at the channel-insulator interface of In 0.53 Ga 0.47 As MOSFETs. Acceptor states with energy inside the conduction band of the semiconductor can explain the dramatic Fermi level pinning observed in the experiments. Our results show that these states significantly impact the electrical mobility measurements but they appear to have a limited influence on the static current drive of short channel devices. [ABSTRACT FROM AUTHOR]

Published
2015
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20. Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells

Author

Luca Selmi, Patrik Osgnach, Kurt Stokbro, Enrico Caruso, Elena Gnani, Giorgio Baccarani, Marilyne Sousa, Mathieu Luisier, Andreas Schenk, Antonio Gnudi, Michele Visciarelli, N. Daix, Pierpaolo Palestri, George Zerveas, Troels Markussen, David Esseni, Roberto Grassi, Lukas Czornomaz, Zerveas, George, Caruso, Enrico, Baccarani, Giorgio, Czornomaz, Luka, Daix, Nicola, Esseni, David, Gnani, Elena, Gnudi, Antonio, Grassi, Roberto, Luisier, Mathieu, Markussen, Troel, Osgnach, Patrik, Palestri, Pierpaolo, Schenk, Andrea, Selmi, Luca, Sousa, Marilyne, Stokbro, Kurt, and Visciarelli, Michele

Subjects
Materials Chemistry2506 Metals and Alloys, III-V semiconductors, Materials science, Band gap, Condensed Matter Physic, 02 engineering and technology, DFT, 01 natural sciences, Condensed Matter::Materials Science, Band-structure, Effective mass (solid-state physics), Tight binding, Quantum mechanics, Ballistic conduction, 0103 physical sciences, Materials Chemistry, Non-parabolic effective mass model, Tight-binding, k · p, Non-parabolic effective mass models, Ultra-Thin Body MOSFET, Electrical and Electronic Engineering, Electronic band structure, Nanoscopic scale, 010302 applied physics, III-V semiconductors Band-structure DFT Tight-binding k . p Non-parabolic effective mass models Ultra-Thin Body MOSFET, Condensed matter physics, Condensed Matter::Other, business.industry, Electronic, Optical and Magnetic Material, K · p, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Condensed Matter Physics, III-V semiconductor, 3. Good health, Electronic, Optical and Magnetic Materials, Semiconductor, Density functional theory, 0210 nano-technology, business, k·p
Abstract

We present and thoroughly compare band-structures computed with density functional theory, tight-binding, k · p and non-parabolic effective mass models. Parameter sets for the non-parabolic Γ , the L and X valleys and intervalley bandgaps are extracted for bulk InAs, GaAs and InGaAs. We then consider quantum-wells with thickness ranging from 3 nm to 10 nm and the bandgap dependence on film thickness is compared with experiments for In 0.53 Ga 0.47 As quantum-wells. The impact of the band-structure on the drain current of nanoscale MOSFETs is simulated with ballistic transport models, the results provide a rigorous assessment of III–V semiconductor band structure calculation methods and calibrated band parameters for device simulations.

Published
2016

21. Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs

Author

Alessandro Paccagnella, Simone Gerardin, Luca Selmi, Cyrille Le Royer, Lili Ding, Francesco Driussi, Elena Gnani, Marta Bagatin, Ding, Lili, Gnani, Elena, Gerardin, Simone, Bagatin, Marta, Driussi, Francesco, Selmi, Luca, Royer, Cyrille Le, and Paccagnella, Alessandro

Subjects
Materials Chemistry2506 Metals and Alloys, Ionizing radiation, Materials science, Stress effects, Radiation, 01 natural sciences, Stress (mechanics), Electrical stress, 0103 physical sciences, Electronic, Materials Chemistry, Optical and Magnetic Materials, Electrical and Electronic Engineering, Tunnel field effect transistor, Bias conditions, 010302 applied physics, 010308 nuclear & particles physics, business.industry, Electrical stre, Condensed Matter Physics, Tunnel field-effect transistor, Electronic, Optical and Magnetic Materials, Optoelectronics, Field-effect transistor, Bias condition, business, Degradation (telecommunications)
Abstract

The interplay between electrical stress and ionizing radiation effects is experimentally investigated in Si-based Tunnel Field Effect Transistors (TFETs). In particular, the impact of bias conditions on the performance degradation is discussed. We found that the electrical stress effects in TFETs could not be ignored in radiation tests, since they can possibly overwhelm the radiation-induced degradation. Under this circumstance, the worst-case bias condition for studying radiation effects is not straightforward to be determined when there is an interplay between electrical stress and ionizing radiation effects.

Published
2016

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