176 results on '"Ren, F."'
Search Results
2. A hydrogen leakage detection system using self-powered wireless hydrogen sensor nodes
3. Novel dielectrics for gate oxides and surface passivation on GaN
4. Effective temperature measurements of AlGaN/GaN-based HEMT under various load lines using micro-Raman technique
5. Gateless AlGaN/GaN HEMT response to block co-polymers
6. Si+ ion implanted MPS bulk GaN diodes
7. AlGaN/GaN HEMT based liquid sensors
8. 2.6 A, 0.69 MW cm−2 single-chip bulk GaN p-i-n rectifier
9. Small signal measurement of Sc2O3 AlGaN/GaN moshemts
10. Thermal stability of WSiX Schottky contacts on n-type 4H-SiC
11. RF performance of HVPE-grown AlGaN/GaN HEMTs
12. GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates
13. Temperature dependence of pnp GaN/InGaN HBT performance
14. Optical properties of Zn1−xMgxO nanorods using catalysis-driven molecular beam epitaxy
15. Hydrogen incorporation, diffusivity and evolution in bulk ZnO
16. Advantages and limitations of MgO as a dielectric for GaN
17. ICP dry etching of ZnO and effects of hydrogen
18. Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation
19. Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers
20. Influence of gate oxide thickness on Sc2O3/GaN MOSFETs
21. RF performance of GaN-based npn bipolar transistors
22. Temperature dependence of forward current characteristics of GaN junction and Schottky rectifiers
23. Role of device area, mesa length and metal overlap distance on breakdown voltage of 4H-SiC p–i–n rectifiers
24. Gate breakdown characteristics of MgO/GaN MOSFETs
25. Temperature dependence of MgO/GaN MOSFET performance
26. Comparison of Pt/GaN and Pt/4H-SiC gas sensors
27. High temperature thermal stability of Au/Ti/WSix Schottky contacts on n-type 4H-SiC
28. Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors
29. Influence of layer doping and thickness on predicted performance of NPN AlGaN/GaN HBTs
30. Hydrogen-sensitive GaN Schottky diodes
31. Thermal simulations of high power, bulk GaN rectifiers
32. Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer
33. Simulations of InGaN-base heterojunction bipolar transistors
34. Effects of base structure on performance of GaN-based heterojunction bipolar transistors
35. Effect of contact geometry on 4H-SiC rectifiers with junction termination extension
36. Influence of edge termination geometry on performance of 4H-SiC p–i–n rectifiers
37. High current bulk GaN Schottky rectifiers
38. The role of cleaning conditions and epitaxial layer structure on reliability of Sc2O3 and MgO passivation on AlGaN/GaN HEMTS
39. Degradation of GaAs/AlGaAs heterojunction bipolar transistors with ion-implant isolation
40. Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions
41. Comparison of the effects of deuterated SiNX films on GaN and GaAs rectifiers
42. Electrical characteristics of p-GaN Schottky rectifiers after PECVD SiNx passivation
43. Influence of PECVD deuterated SiNx on GaAs MESFETs and GaAs/AlGaAs HBTs
44. Development of plasma dielectric deposition method for increased pre-metal dielectric interfacial film stability
45. MOCVD-grown HEMTs on Al2O3 substrates
46. Temperature characteristics of 850 nm, intra-cavity contacted, shallow implant-apertured vertical-cavity surface-emitting lasers
47. 1.6 A GaN Schottky rectifiers on bulk GaN substrates
48. GaN pnp bipolar junction transistors operated to 250 °C
49. Influence of SiO2 PECVD layers on p-GaN rectifiers
50. Finite difference analysis of thermal characteristics of CW operation 850 nm lateral current injection and implant-apertured VCSEL with flip-chip bond design
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.