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We have very recently developed a theory of the fluctuations of the state occupancy function in semiconductors, including a new expression of the noise source term instead of the classical one which was shown to be erroneous. In the present paper, we show that this theory can apply to practical situations, since it allows us to actually compute the transverse diffusion coefficient versus the electric field intensity in the range 0–50 kV/cm, in p-type silicon at 300 K. Also the variance of the number of particles in a volume is computed.

We present the first direct numerical computation of the distribution function as a solution of the Boltzmann equation in the degenerate case. The method provides the transient and steady state distribution functions with a high accuracy. Increasing the concentration reduces hot carrier effects. The degenaracy has a significant influence on the distribution function at free carrier concentrations above 1019 cm−3. It has practically no influence on the drift velocity in bulk p-type Silicon, but it modifies significantly the average energy, which is shifted towards higher values, independantly from the electric field strength..