1. A charge-based compact model for predicting the current–voltage and capacitance–voltage characteristics of heavily doped cylindrical surrounding-gate MOSFETs
- Author
-
Liu, Feilong, Zhang, Jian, He, Frank, Liu, Feng, Zhang, Lining, and Chan, Mansun
- Subjects
- *
METAL oxide semiconductor field-effect transistors , *SEMICONDUCTOR doping , *MATHEMATICAL models , *ELECTRIC currents , *POISSON'S equation , *PREDICTION models , *SIMULATION methods & models , *DUAL integral equations - Abstract
Abstract: This paper presents a charge-based compact model for predicting the current–voltage and capacitance–voltage characteristics of heavily doped long-channel cylindrical surrounding-gate (SRG) MOSFETs. Starting from Poisson’s equation with fixed charge and inversion charge terms, a closed-form equation of inversion charge is obtained with the full-depletion approximation. Substituting this inversion charge expression into Pao-Sah’s dual integral, a drain current expression with concise form is derived. Based on the Ward-Dutton linear-charge-partition method and the current continuity principle, all trans-capacitances are obtained analytically. The developed model is valid in all operation regions from the sub-threshold to strong inversion and from the linear to the saturation region without any smooth function. The model predictions have been extensively compared with 3D numerical simulations and a good agreement is observed in most of the operation regions with a wide range of geometrical parameters. [Copyright &y& Elsevier]
- Published
- 2009
- Full Text
- View/download PDF