1. Layout dependent hot-carrier-injection-induced pLDMOS degradation from a non-destructive characterization viewpoint.
- Author
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Zhao, D., Wang, Y., Chen, Y., Pang, Z., Fu, Z., Zhou, Z., Liu, F., Dong, G., and He, Y.
- Subjects
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TEMPERATURE effect , *MARKETING channels , *TRENCHES - Abstract
• Interface states generation induced by HCI stress was layout-dependent. • Self-heating induced local temperature rise. • Multi-finger device suffered more HCI degradation. • Non-destructive method for interface states characterization. V gmax Hot-Carrier-Injection (HCI) degradation in Multi-finger p-Laterally-Diffused Metal-Oxide-Semiconductor Field-Effect-Transistors (LDMOSFET) had been investigated by Multi-Region Direct-Current-Current-Voltage (MR-DCIV) characterization method-probing the interface state distribution along the channel, accumulation and (Shallow Trench Isolation) STI-drift region. The method feasibility was verified by device simulation and stress experiment. The enhanced interface state generation in the channel and accumulation region was clearly revealed in multi-finger layout device. This layout dependent degradation was associated with self-heating effect and temperature accelerated V gmax HCI stress. [ABSTRACT FROM AUTHOR]
- Published
- 2021
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