1. Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN–GaAlN quantum wells grown by molecular beam epitaxy
- Author
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Jean Massies, Jacques Allègre, Mathieu Gallart, A Morel, Bernard Gil, Nicolas Grandjean, Pierre Lefebvre, Thierry Taliercio, Izabella Grzegory, S. Porowski, Groupe d'étude des semiconducteurs (GES), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Institute of High Pressure Physics [Warsaw] (IHPP), Polska Akademia Nauk = Polish Academy of Sciences (PAN), Actions Concertées Incitatives (ACI) du MENRT 'BOQUANI' et 'NANILUB'., European Project: HPRN-CT-1999- 00132,CLERMONT, Centre National de la Recherche Scientifique (CNRS)-Université Montpellier 2 - Sciences et Techniques (UM2), and Université Nice Sophia Antipolis (... - 2019) (UNS)
- Subjects
Photoluminescence ,Exciton ,Analytical chemistry ,chemistry.chemical_element ,02 engineering and technology ,Nitride ,Epitaxy ,01 natural sciences ,7. Clean energy ,0103 physical sciences ,Materials Chemistry ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,010306 general physics ,Quantum well ,time-resolved optical spectroscopies ,[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics] ,PACS 78.55.Cr ,78.66.Fd ,78.40.Fy ,business.industry ,Chemistry ,epitaxy ,General Chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,REFLECTANCE ,quantum wells ,EMISSION-SPECTRA ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic ,Optoelectronics ,PHOTOLUMINESCENCE ,Time-resolved spectroscopy ,0210 nano-technology ,business ,Indium ,Molecular beam epitaxy - Abstract
We have grown GaN films and GaN-AlGaN quantum wells (QWs) on homoepitaxial substrates, by molecular beam epitaxy using ammonia. Both the GaN film and the QW are found to have superior excitonic recombination properties which are extremely promising for the development of indium free ultra-violet lasers based on nitrides. (C) 2001 Published by Elsevier Science Ltd.
- Published
- 2001