1. Deep impurity levels in Ge1−xSix alloys
- Author
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G. Kh. Azhdarov, R. Z. Kyazimzade, and M Hostut
- Subjects
Silicon ,Deep level ,Binding energy ,Inorganic chemistry ,Analytical chemistry ,chemistry.chemical_element ,Charge (physics) ,General Chemistry ,Condensed Matter Physics ,chemistry ,Impurity ,Hall effect ,Crystal model ,Materials Chemistry - Abstract
The ground-state binding energies of deep impurities (Cu, Ag, Au, Zn, Cd, Hg, Ni, Fe, S, Se, Te) in Ge 1− x Si x (0≤ x ≤0.35) have been experimentally determined on the basis of Hall measurements. It is shown that the average activation energies (Δ E ) of different charge states of the impurities in Ge 1− x Si x increase approximately linearly with silicon concentration in agreement with the concept of virtual crystal model for alloys. Random-alloy splitting of the deep impurity levels due to different local surroundings of the defect core in the crystals is discussed. Obtained results allow binding energies and possible charge states of the investigated deep impurities in all Ge 1− x Si x system to be determined.
- Published
- 1999