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This paper traces briefly the history of this photovoltaic materials and it tries to look at possible future scenarios. A large part of the paper is concerned with silicon although from solid-state physics we know that silicon is not the ideal material for photovoltaic conversion. From the first solar cell developed at Bell Laboratories in 1954 photovoltaics was dominated by silicon. The reasons for this dominating position are investigated. Crystalline silicon today has a market share of 86% which is almost equally distributed between single crystal and cast silicon. Amorphous silicon has another 13%. The main endeavor is to reduce cost. Present trends in the crystalline field are reviewed. The conventional technology still has significant potential for cost reduction but this comes only with increasing volume. A problem to be solved is the supply of solar-grade silicon material. Other future possibilities include thin film crystalline silicon on different substrates. Because of the low absorption coefficient of silicon light trapping is required. True thin film materials need only 1–2 μm of material. Amorphous silicon, copper indium diselenide (CIS) and CdTe are hopeful approaches for very cost-effective solar cells. Some other, more speculative materials and concepts are described at the end of this paper

An interdigitated front grid structure for both the emitter and base was simulated and realized. This contact design is suitable for thin-film solar cells on insulating substrates or insulating intermediate layers. Confirmed efficiencies of up to 18.2% were achieved on a 46 μm thick epitaxial silicon layer which was grown on a SIMOX wafer with an implanted compact SiO 2 intermediate layer. Samples with and without a highly doped back surface field were prepared to study the influence of the back-side recombination velocity. L eff values of 250 and 52 μm, corresponding to S back values of 800 and 10 5 cm/s, respectively, were measured, thus, underlining the importance of a low back-side recombination velocity. The optical confinement properties of the SiO 2 intermediate layers were calculated depending on the angle of the incident rays. An angle from the plane normal which is larger than 23° is necessary in order to achieve the condition of total internal reflection. Future work will focus on recrystallized Si layers on foreign substrates [1]. Since the surface of the silicon layer is fairly rough after the recrystallisation process, another set of masks was designed which is more tolerant to aligning accuracy. This is mainly relevant for the area where the base contacts are located between the locally diffused emitter. The technology for CVD Si-layer deposition, zone melting recrystallization (ZMR), as well as for a simplified solar cell process is under investigation.