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Despite significant efforts to fabricate high energy density (ED) lithium (Li) metal anodes, problems such as dendrite formation and the need for excess Li (leading to low N/P ratios) have hampered Li metal battery (LMB) development. Here, the use of germanium (Ge) nanowires (NWs) directly grown on copper (Cu) substrates (Cu-Ge) to induce lithiophilicity and subsequently guide Li ions for uniform Li metal deposition/stripping during electrochemical cycling is reported. The NW morphology along with the formation of the Li 15 Ge 4 phase promotes uniform Li-ion flux and fast charge kinetic, resulting in the Cu-Ge substrate demonstrating low nucleation overpotentials of 10 mV (four times lower than planar Cu) and high Columbic efficiency (CE) efficiency during Li plating/stripping. Within a full-cell configuration, the Cu-Ge@Li - NMC cell delivered a 63.6% weight reduction at the anode level compared to a standard graphite-based anode, with impressive capacity retention and average CE of over 86.5% and 99.2% respectively. The Cu-Ge anodes are also paired with high specific capacity sulfur (S) cathodes, further demonstrating the benefits of developing surface-modified lithiophilic Cu current collectors, which can easily be integrated at the industrial scale., (© 2023 The Authors. Small published by Wiley-VCH GmbH.)

Lithium (Li) metal batteries (LMBs) provide superior energy densities far beyond current Li-ion batteries (LIBs) but practical applications are hindered by uncontrolled dendrite formation and the build-up of dead Li in "hostless" Li metal anodes. To circumvent these issues, we created a 3D framework of a carbon paper (CP) substrate decorated with lithiophilic nanowires (silicon (Si), germanium (Ge), and SiGe alloy NWs) that provides a robust host for efficient stripping/plating of Li metal. The lithiophilic Li 22 Si 5 , Li 22 (Si 0.5 Ge 0.5 ) 5, and Li 22 Ge 5 formed during rapid Li melt infiltration prevented the formation of dead Li and dendrites. Li 22 Ge 5 /Li covered CP hosts delivered the best performance, with the lowest overpotentials of 40 mV (three times lower than pristine Li) when cycled at 1 mA cm -2 /1 mAh cm -2 for 1000 h and at 3 mA cm -2 /3 mAh cm -2 for 500 h. Ex situ analysis confirmed the ability of the lithiophilic Li 22 Ge 5 decorated samples to facilitate uniform Li deposition. When paired with sulfur, LiFePO 4, and NMC811 cathodes, the CP-LiGe/Li anodes delivered 200 cycles with 82%, 93%, and 90% capacity retention, respectively. The discovery of the highly stable, lithiophilic NW decorated CP hosts is a promising route toward stable cycling LMBs and provides a new design motif for hosted Li metal anodes., (© 2022 The Authors. Small published by Wiley-VCH GmbH.)

High loading (>1.6 mg cm -2 ) of Si nanowires (NWs) is achieved by seeding the growth from a dense array of Cu 15 Si 4 NWs using tin seeds. A one-pot synthetic approach involves the direct growth of CuSi NWs on Cu foil that acts as a textured surface for Sn adhesion and Si NW nucleation. The high achievable Si NW loading is enabled by the high surface area of CuSi NWs and bolstered by secondary growth of Si NWs as branches from both Si and CuSi NW stems, forming a dense Si active layer, interconnected with an electrically conducting CuSi array (denoted Si/CuSi). When employed as Li-ion battery anodes, the Si/CuSi nest structure demonstrates impressive rate performance, reaching 4.1 mAh cm -2 at C/20, 3.1 mAh cm -2 at C/5, and 0.8 mAh cm -2 at 6C. Also, Si/CuSi shows remarkable long-term stability, delivering a stable areal capacity of 2.2 mAh cm -2 after 300 cycles. Overall, complete anode fabrication is achieved within a single reaction by employing an inexpensive Sn powder approach., (© 2021 The Authors. Small published by Wiley-VCH GmbH.)

A scalable and cost-effective process is used to electroplate metallic Zn seeds on stainless steel substrates. Si and Ge nanowires (NWs) are subsequently grown by placing the electroplated substrates in the solution phase of a refluxing organic solvent at temperatures >430 °C and injecting the respective liquid precursors. The native oxide layer formed on reactive metals such as Zn can obstruct NW growth and is removed in situ by injecting the reducing agent LiBH 4 . The findings show that the use of Zn as a catalyst produces defect-rich Si NWs that can be extended to the synthesis of Si-Ge axial heterostructure NWs with an atomically abrupt Si-Ge interface. As an anode material, the as grown Zn seeded Si NWs yield an initial discharge capacity of 1772 mAh g -1 and a high capacity retention of 85% after 100 cycles with the active participation of both Si and Zn during cycling. Notably, the Zn seeds actively participate in the Li-cycling activities by incorporating into the Si NWs body via a Li-assisted welding process, resulting in restructuring the NWs into a highly porous network structure that maintains a stable cycling performance., (© 2021 Wiley-VCH GmbH.)

New techniques to directly grow metal oxide nanowire networks without the need for initial nanoparticle seed deposition or postsynthesis nanowire casting will bridge the gap between bottom-up formation and top-down processing for many electronic, photonic, energy storage, and conversion technologies. Whether etched top-down, or grown from catalyst nanoparticles bottom-up, nanowire growth relies on heterogeneous material seeds. Converting surface oxide films, ubiquitous in the microelectronics industry, to nanowires and nanowire networks by the incorporation of extra species through interdiffusion can provide an alternative deposition method. It is shown that solution-processed thin films of oxides can be converted and recrystallized into nanowires and networks of nanowires by solid-state interdiffusion of ionic species from a mechanically contacted donor substrate. NaVO 3 nanowire networks on smooth Si/SiO 2 and granular fluorine-doped tin oxide surfaces can be formed by low-temperature annealing of a Na diffusion species-containing donor glass to a solution-processed V 2 O 5 thin film, where recrystallization drives nanowire growth according to the crystal habit of the new oxide phase. This technique illustrates a new method for the direct formation of complex metal oxide nanowires on technologically relevant substrates, from smooth semiconductors, to transparent conducting materials and interdigitated device structures., (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)