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This work focused on the effects of electroforming ambient temperature and annealing process on the metal oxide multilayer switching resistive random access memory (RRAM) device. We developed Pt/HfO2/TiO2/HfO2/Pt RRAM cells with annealing and without annealing process. Annealed devices are electroformed at a high ambient temperature 80 °C (A-80). Non-annealed devices are electroformed at low atmosphere temperature 25 °C (NA-25). We investigate the outcomes of NA-25 and A-80 devices. Results confirmed that annealed and high ambient temperature formed devices (A-80) contribute to the low operating voltage, improved uniformity, and reliability compared to NA-25 device. [ABSTRACT FROM AUTHOR]