329 results on '"Yamazaki, Shunpei"'
Search Results
2. 62‐1: High Performance OLED with Microlens Array, Metal Mask‐Less Lithography, and RGB Side‐by‐Side Patterning.
3. 45‐3: Molecular Design of Blue Phosphorescent Platinum Complexes for Highly Efficient, Long‐Lived Blue Organic Light‐Emitting Diodes.
4. 13‐4: OLED/Organic Photodetector Dual‐Mode Device Integrated into Side‐by‐Side Patterned OLED Display.
5. 13‐2: Organic Light‐Emitting Diode Display Constituted Side‐by‐Side OLED and Organic Photodiode Pixels Integrated in the Same Plane by Adopting MML (Metal Mask‐Less Lithography) Technology.
6. 69‐4: Distinguished Paper:High‐luminance and Highly Reliable Tandem OLED Display Including New Intermediate Connector Designed for Photolithography Applications
7. P‐130: 3207‐ppi, 1.50‐in. OLED Microdisplay with All Pixels Formed Through RGB Side‐by‐Side Patterning by Photolithography
8. P‐151: Late‐News Poster: 1.5‐inch, 3207‐ppi Foveated Display with OLED/OS/Si Structure Capable of 32‐Division Control of Resolution and Frame Rate
9. 43‐4: Ultra‐High On‐Current Vertical Field‐Effect Transistor with Submicron Channel Length of 0.5 µm Using CAAC‐IGZO
10. 28‐4: 1.50‐Inch, 3207‐ppi OLED Display and Optical System for VR Use
11. 17‐3: An 8.3‐inch 1058‐ppi OLED Display with Side‐by‐Side Pixel Structure Fully Fabricated by Photolithography
12. 48‐2: Vertical Oxide Semiconductor Transistor Suitable for High‐Resolution OLED Display
13. P‐8: Analysis of Degradation Mechanism of Oxide Semiconductor FETs with High Tolerance to Intense NBTIS
14. 27‐1: Fabrication Method for Miniaturized CAAC‐OS FET for High‐Definition AR/VR Displays
15. 9‐1: Evaluation of X‐ray Resistance of Submicron‐Size c ‐Axis Aligned Crystalline‐Oxide Semiconductor
16. 32‐1: Oxide Semiconductor Field‐Effect Transistor for High‐Resolution Displays Capable of Deep Black Display
17. 32‐3: 1.5‐inch, 3207‐ppi Side‐by‐Side OLED Display Capable of 32‐Division Driving with OSLSI/SiLSI Structure Fabricated by Photolithography
18. 10‐1: Layout of 1.50‐inch, 3207‐ppi OLED Display with OSLSI/SiLSI Structure Capable of Division Driving Fabricated through VLSI Process with Side‐by‐Side Patterning by Photolithography
19. P‐6: Student Poster: 2731ppi OLED Display with Low Power Consumption and Wide Viewing Angle Using OS/Si VLSI Process Technology
20. P‐151: Late‐News Poster:1.5‐inch, 3207‐ppi Foveated Display with OLED/OS/Si Structure Capable of 32‐Division Control of Resolution and Frame Rate
21. 20‐3: Ultra‐High‐Performance Blue Fluorescent OLED with Efficiency Over 250 cd/A/CIEy Using Organic Carrier‐Transport Material with Low Refractive Index
22. P‐4: Novel Oxide Semiconductors Enabling as High On‐State Current as LTPS
23. 19‐4: Ultra‐Long‐Life Deep‐Blue OLED Device Achieved by Controlling the Carrier Recombination Site
24. 9‐4: Fabrication of Oxide‐Semiconductor FETs with Submicron Channel Length
25. 21‐1: Invited Paper: 5291‐ppi Microdisplay Using CAAC‐IGZO FET with Channel Length of 60 nm
26. 62‐2: Deep‐Red and Near‐Infrared OLEDs with High Efficiency and Long Lifetime for Display and Light‐Source Applications
27. 14‐2: Invited Paper: OLED Display Incorporating an Organic Image Sensor
28. P‐6: Student Poster:2731ppi OLED Display with Low Power Consumption and Wide Viewing Angle Using OS/Si VLSI Process Technology
29. 23‐2: 2351‐ppi OLED Display with Stacked OS‐FETs with L = 0.36 µm
30. P‐54: An Oxide‐Semiconductor‐FET‐Based Dynamic Logic Circuit for Wearable Systems
31. 71‐4: Distinguished Paper: OLED Display Incorporating Organic Image Sensor
32. 23‐1: Distinguished Paper: 5291 ppi Organic Light Emitting Diode Display using Field‐effect Transistors Including a C‐Axis Aligned Crystalline Oxide Semiconductor
33. 40‐3: Highly Stable Deep‐Blue OLED Achieved by Hole‐Transport Material with Deep HOMO Level
34. 37‐1: Liquid Crystal Display Panel with a Pixel Including Oxide Semiconductor Field‐Effect Transistor Memory (Pixel AI)
35. P‐182: Long‐Life Green Phosphorescent OLED with Light‐Emitting Layer Formed by Two‐Source Evaporation Using Host Material with Novel Hetero Fused Ring
36. 64‐1: Lensless Microscope Using High‐Resolution Display
37. 46‐2: Invited Paper: A Flexible OLED Display with Robustness and Bendability
38. 40‐4: High‐Temperature Operational Stability of Deep‐Red Phosphorescent OLED with Exciplex‐Forming Host Material and Guest Material
39. 5‐2: Fluorescent OLED Achieving External Quantum Efficiency over 20% and Longer Lifetime than Phosphorescent OLED
40. 20-3: Novel Host-Guest System for Drastic Improvement in the Lifetime of a Deep-Red OLED that Satisfies the Red Chromaticity of the BT.2020 Standard
41. 46-4: 513-ppi Hybrid Display with Stacked Transistors
42. 5-3: OLED Display Device Mounted with a Novel External Compensating Circuit
43. 56-4: Key Technologies for Assembling Kawara-type Multidisplays
44. 13-3: Distinguished Paper: Highly Efficient Deep-Blue Fluorescent Dopant for Achieving Low-Power OLED Display Satisfying BT.2020 Chromaticity
45. 26-3: Difference in Optical and Hole-injection Properties between Organic Material/Molybdenum Oxide Composite (OMOx) Layer and Hole-injection Layer with Organic Acceptor
46. 50-3: Formation of Source and Drain Regions in Top-Gate Self-Aligned Oxide Semiconductor Field-Effect Transistor
47. 26-2: Extremely High-Efficient OLED Achieving External Quantum Efficiency over 40% by Carrier Injection Layer with Super-Low Refractive Index
48. 68-4: Top-emission OLED Kawara-type Multidisplay with Auxiliary Electrode
49. 56-3: New Process to Fabricate Hybrid Display
50. 35-1: Strategy for Developing an Ultra-High-Luminance AMOLED Display
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.