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Start Over Author "Lin, Ching Shun" Journal sid symposium digest of technical papers
2 results on '"Lin, Ching Shun"'

2. AC Gate-Drain-Bias Stress Study of amorphous Indium Gallium Zinc Oxide Thin Film Transistors for GOA Applications.

Author

Yang, Chao-Yu, Huang, Shih-Che, Chiu, Hao-Lin, Hsieh, Ting, Yeh, Bo-Liang, Lin, Ching Shun, Liao, Ta-Wen, Tseng, Hsien-Kai, Lin, Chun Nan, and Tsai, Wen Ching

Subjects
THIN film transistors, INDIUM gallium zinc oxide, ELECTRIC currents, ELECTRIC potential, ANALOG circuits
Abstract

This paper investigates the reliability behavior of IGZO TFT with different widths under AC gate and drain stress. Device of larger width suffers from worse current degradation. By comparing the contact resistance after stress such behavior can be attributed to the damaged contact region by large current during stress. [ABSTRACT FROM AUTHOR]

Published
2012
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