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In this paper, a graphene-based THz metamaterial has been designed and characterized for use in sensing various refractive index profiles. The proposed single-band THz sensor was constructed using a graphene-metal hybridized periodic metamaterial wherein the unit cell had a footprint of 1.395λ eff × 1.395λ eff and resonated at 4.4754 THz. The realized peak absorption was 98.88% at 4.4754 THz. The sensitivity of the proposed metamaterial sensor was estimated using the absorption characteristics of the unit cell. The performance of the sensor was analyzed under two different categories, viz. the random dielectric loading and chemical analytes, based on the refractive index. The proposed THz sensor offered a peak sensitivity of 22.75 GHz/Refractive Index Unit (RIU) for the various sample loadings. In addition, the effect of the sample thickness on the sensor performance was analyzed and the results were presented. From the results, it can be inferred that the proposed metamaterial THz sensor that was based on a refractive index is suitable for THz sensing applications.

The spread of practical terahertz (THz) systems dedicated to the telecommunication, pharmacy, civil security, or medical markets requires the use of mainstream semiconductor technologies, such as complementary metal-oxide-semiconductor (CMOS) lines. In this paper, we discuss the operation of a CMOS-based free space all-electronic system operating near 250 GHz, exhibiting signal-to-noise ratio (SNR) with 62 dB in the direct detection regime for one Hz equivalent noise bandwidth. It combines the state-of-the-art detector based on CMOS field-effect-transistors (FET) and a harmonic voltage-controlled oscillator (VCO). Three generations of the oscillator circuit are presented, and the performance characterization techniques and their improvement are explained in detail. The manuscript presents different emitter-detector pair operation modalities, including spectroscopy and imaging.

We present a real-time THz imaging method using a commercial fiber-coupled photo conductive antenna as the THz source and an uncooled microbolometer camera for detection. This new combination of state-of-the-art components is very adaptable due to its compact and uncooled radiation source, whose fiber coupling allows for a flexible placement. Using a camera with high sensitivity renders real-time imaging possible. As a proof-of-concept, the beam shape of a THz Time Domain Spectrometer was measured. We demonstrate real time imaging at nine frames per second and show its potential for practical applications in transmission geometry covering both material science and security tasks. The results suggest that hidden items, complex structures and the moisture content of (biological) materials can be resolved. We discuss the limits of the current setup, possible improvements and potential (industrial) applications, and we outline the feasibility of imaging in reflection geometry or extending it to multi-spectral imaging using band pass filters.

We present a fiber coupled transceiver head for terahertz (THz) time-domain reflection measurements. The monolithically integrated transceiver chip is based on iron (Fe) doped In 0.53 Ga 0.47 As (InGaAs:Fe) grown by molecular beam epitaxy. Due to its ultrashort electron lifetime and high mobility, InGaAs:Fe is very well suited as both THz emitter and receiver. A record THz bandwidth of 6.5 THz and a peak dynamic range of up to 75 dB are achieved. In addition, we present THz imaging in reflection geometry with a spatial resolution as good as 130 µm. Hence, this THz transceiver is a promising device for industrial THz sensing applications.

The all solid-state terahertz (THz) radar has obvious miniaturized integration and high resolution imaging advantages compared with conventional microwave radar. In this paper, a 0.22 THz active frequency-modulated pulse radar system with one transmission channel and four receiving channels is presented, and interferometric inverse synthetic aperture radar (InISAR) imaging experiments, which can acquire altitude information of objects, are carried out. In order to acquire high-quality InISAR images, a calibration method is presented to solve the nonlinearity of wideband signal frequency and phase inconsistency of different receiving channels together. Furthermore, to deal with the phase wrapping in InISAR imaging of objects with large scale, a novel method based on the dominant scatterers to estimate the objects rotation rate is presented. Finally, to show more information of objects in the InISAR images, the imaging results with a large rotation angle by the convolutional back-projection algorithm are obtained. The imaging results verify the superior performance of the multi-channel THz radar system and the imaging processing method, which can provide support for further research on InISAR imaging in the THz band., Competing Interests: The authors declare no conflict of interest.

We demonstrate a high-speed terahertz (THz) waveform measurement system for intense THz light with a scan rate of 100 Hz. To realize the high scan rate, a loudspeaker vibrating at 50 Hz is employed to scan the delay time between THz light and electro-optic sampling light. Because the fast scan system requires a high data sampling rate, we develop an Yb-doped fiber laser with a repetition rate of 100 kHz optimized for effective THz light generation with the output electric field of 1 kV/cm. The present system drastically reduces the measurement time of the THz waveform from several minutes to 10 ms.

We propose a differential-type complementary metal-oxide-semiconductor (CMOS) sub-terahertz (THz) detector with a subthreshold preamplifier. The proposed detector improves the voltage responsivity and effective signal-to-noise ratio (SNR) using the subthreshold preamplifier, which is located between the differential detector device and main amplifier. The overall noise of the detector for the THz imaging system is reduced by the preamplifier because it diminishes the noise contribution of the main amplifier. The subthreshold preamplifier is self-biased by the output DC voltage of the detector core and has a dummy structure that cancels the DC offsets generated by the preamplifier itself. The 200 GHz detector fabricated using 0.25 μm CMOS technology includes a low drop-out regulator, current reference blocks, and an integrated antenna. A voltage responsivity of 2020 kV/W and noise equivalent power of 76 pW/√Hz are achieved using the detector at a gate bias of 0.5 V, respectively. The effective SNR at a 103 Hz chopping frequency is 70.9 dB with a 0.7 W/m² input signal power density. The dynamic range of the raster-scanned THz image is 44.59 dB., Competing Interests: The authors declare no conflict of interest.