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In order to improve the output sensitivity of the piezoelectric acceleration sensor, this paper proposed a high sensitivity acceleration sensor based on a piezoelectric metal oxide semiconductor field effect transistor (MOSFET). It is constituted by a piezoelectric beam and an N-channel depletion MOSFET. A silicon cantilever beam with Pt/ZnO/Pt/Ti multilayer structure is used as a piezoelectric beam. Based on the piezoelectric effect, the piezoelectric beam generates charges when it is subjected to acceleration. Due to the large input impedance of the MOSFET, the charge generated by the piezoelectric beam can be used as a gate control signal to achieve the purpose of converting the output charge of the piezoelectric beam into current. The test results show that when the external excitation acceleration increases from 0.2 g to 1.5 g with an increment of 0.1 g, the peak-to-peak value of the output voltage of the proposed sensors increases from 0.327 V to 2.774 V at a frequency of 1075 Hz. The voltage sensitivity of the piezoelectric beam is 0.85 V/g and that of the proposed acceleration sensor was 2.05 V/g, which is 2.41 times higher than the piezoelectric beam. The proposed sensor can effectively improve the voltage output sensitivity and can be used in the field of structural health monitoring. [ABSTRACT FROM AUTHOR]

A three-axis accelerometer with a double L-shaped beams structure was designed and fabricated in this paper, consisting of a supporting body, four double L-shaped beams and intermediate double beams connected to two mass blocks. When applying acceleration to the accelerometer chip, according to the output voltage changes of three Wheatstone bridges constituted by twelve piezoresistors on the roots of the beams, the corresponding acceleration along three axes can be measured based on the elastic force theory and piezoresistive effect. To improve the characteristics of the three-axis accelerometer, we simulated how the width of the intermediate double beams affected the characteristics. Through optimizing the structure size, six chips with different widths of intermediate double beams were fabricated on silicon-on-insulator (SOI) wafers using micro-electromechanical systems (MEMS) technology and were packaged on printed circuit boards (PCB) by using an electrostatic bonding process and inner lead bonding technology. At room temperature and VDD = 5.0 V, the resulting accelerometer with an optimized size (w = 500 μm) realized sensitivities of 0.302 mV/g, 0.235 mV/g and 0.347 mV/g along three axes, with a low cross-axis sensitivity. This result provides a new strategy to further improve the characteristics of the three-axis accelerometer. [ABSTRACT FROM AUTHOR]

A magnetic field sensor with a new concentrating-conducting magnetic flux structure (CCMFS) is proposed in this paper, using a silicon-on insulator (SOI) Hall element fabricated by complementary metal oxide semiconductor (CMOS) technology as a magnetic sensitive unit. By fixing the CCMFS above the Hall element packaged on a printed circuit board (PCB) based on inner-connect wire bonding technology, a non-magnetized package can subsequently be obtained. To analyze the inner magnetic field vector distribution of the CCMFS, a simulation model was built based on a finite element software, where the CCMFS was processed using Ni-Fe alloys material by a low speed wire-cut electric discharge technology. The test results showed that the measurement of magnetic fields along a sensitive and a non-sensitive axis can be achieved when VDD = 5.0 V at room temperature, with magnetic sensitivities of 122 mV/T and 132 mV/T in a testing range from −30 mT to 30 mT, respectively. This study makes it possible to not only realize the detection of magnetic field, but also to significantly improve the sensitivity of the sensor along a non-sensitive axis. [ABSTRACT FROM AUTHOR]

A monolithically-integrated two-dimensional (2D) magnetic field sensor consisting of two difference structures (DSІ and DSII) is proposed in this paper. The DSІ and DSII are composed of four silicon magnetic sensitive transistors (SMST1, SMST2, SMST3 and SMST4) and four collector load resistors (RL1, RL2, RL3 and RL4). Based on the magnetic sensitive principle of SMST, the integrated difference structure can detect magnetic fields’ component (Bx and By) along the x-axis and y-axis, respectively. By adopting micro-electromechanical systems (MEMS) and packaging technology, the chips were fabricated on a p-type <100> orientation silicon wafer with high resistivity and were packaged on printed circuit boards (PCBs). At room temperature, when the VCE = 5.0 V and IB = 8.0 mA, the magnetic sensitivities (Sxx and Syy) along the x-axis and the y-axis were 223 mV/T and 218 mV/T, respectively. The results show that the proposed sensor can not only detect the 2D magnetic field vector (B) in the xy plane, but also that Sxx and Syy exhibit good uniformity. [ABSTRACT FROM AUTHOR]