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1. Bipolar Switching Properties of Bilayer V2O5/Sm2O3 Thin-film Resistive Random Access Memory Device Prepared by Sputtering Technology.

Author

Jian-Yang Lin, Kuang-Yao Wu, Kai-Huang Chen, Chien-Min Cheng, and Cheng-Ying Li

Subjects
THIN films, ELECTRIC potential, NONVOLATILE random-access memory, DATA acquisition systems, SEMICONDUCTOR storage devices
Abstract

In this study, VO3 have been successfully fabricated for application in resistive random access memory (RRAM). The RRAMs with V2O5 and Sm2O3 films have shown bipolar switching characteristics. Introducing a suitable oxygen concentration in the V2O5 film can improve the switching performance. Postannealing of the V2O5/Sm2O3/TiN/SiO2/Si device can decrease the forming voltage to 1.1 V. [ABSTRACT FROM AUTHOR]

Published
2018
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