39 results on '"Zavarin, E. E."'
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2. Resonant Reflection of Light from an Excitonic Optical Grating Formed by 100 InGaN Quantum Wells
3. Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells
4. Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs
5. Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors
6. Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells
7. effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
8. Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs
9. Elastic strains and delocalized optical phonons in AlN/GaN superlattices
10. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
11. Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency
12. Optical lattices of excitons in InGaN/GaN quantum well systems
13. Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers
14. Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN
15. Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region
16. InGaN/GaN heterostructures grown by submonolayer deposition
17. Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them
18. Study of tunneling transport of carriers in structures with an InGaN/GaN active region
19. Formation of composite InGaN/GaN/InAlN quantum dots
20. The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes
21. Structural and optical properties of InAlN/GaN distributed Bragg reflectors
22. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices
23. Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes
24. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes
25. Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers
26. Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs
27. Energy characteristics of excitons in structures based on InGaN alloys
28. Photoluminescence of localized excitons in InGan quantum dots
29. Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots
30. The study of lateral carrier transport in structures with InGaN quantum dots in the active region
31. Studies of the electron spectrum in structures with InGaN quantum dots using photocurrent spectroscopy
32. Thermal-field forward current in GaN-based surface-barrier structures
33. A study of carrier statistics in InGaN/Gan LED structures
34. Kinetics and inhomogeneous carrier injection in InGaN nanolayers
35. Growth of AlGaN epitaxial layers and AlGaN/GaN superlattices by metal-organic chemical vapor deposition
36. Low-temperature time-resolved photoluminescence in InGaN/GaN quantum wells
37. Nanorelief of a GaN surface: The effect of sulfide treatment
38. MOCVD-grown AlGaN/GaN heterostructures with high electron mobility
39. Formation of composite InGaN/GaN/InAlN quantum dots.
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