537 results on '"Yu G"'
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2. High-Quality Etching of GaN Materials with Extremely Slow Rate and Low Damage
3. Formation of a Graphene-Like SiN Layer on the Surface Si(111)
4. Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures
5. Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers
6. Hopping conductivity and dielectric relaxation in Schottky barriers on GaN
7. The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination
8. CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures
9. Quantum Hall effect and hopping conductivity in n-InGaAs/InAlAs nanoheterostructures
10. Investigation of the thermal stability of metastable GeSn epitaxial layers
11. Efficiency droop in GaN LEDs at high injection levels: Role of hydrogen
12. The modification of BaCe0.5Zr0.3Y0.2O3–δ with copper oxide: Effect on the structural and transport properties
13. On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n +-GaN substrates
14. Pb1–x Eu x Te alloys (0 ⩽ x ⩽ 1) as materials for vertical-cavity surface-emitting lasers in the mid-infrared spectral range of 4–5 μm
15. Sn-enriched Ge/GeSn nanostructures grown by MBE on (001) GaAs and Si wafers
16. Cyclotron resonance in InAs/AlSb quantum wells in magnetic fields up to 45 T
17. Temperature scaling in the quantum-Hall-effect regime in a HgTe quantum well with an inverted energy spectrum
18. Increase in the Shockley–Read–Hall recombination rate in InGaN/GaN QWs as the main mechanism of the efficiency droop in LEDs at high injection levels
19. Formation of Acceptor Centers in CdHgTe as a Result of Water and Heat Treatments
20. Dynamics of carrier recombination in a semiconductor laser structure
21. Nitridation of an unreconstructed and reconstructed (√31 ×√31)R ± 9° (0001) sapphire surface in an ammonia flow
22. Electron-electron interaction and the universality of critical indices for quantum Hall effect plateau-plateau transitions in n-InGaAs/GaAs nanostructures with double quantum wells
23. Growth of EuO/Si and EuO/SrO/Si heteroepitaxial structures by molecular-beam epitaxy
24. Ge/GeSn heterostructures grown on Si (100) by molecular-beam epitaxy
25. Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures
26. Investigation of GaAs/AlGaAs quantum cascade structures by optical methods based on hot luminescence in the near-infrared range
27. Specific features of preparation of dense ceramic based on barium zirconate
28. p-ZnO nanowires—A promising material for the fabrication of vacuum pressure sensors
29. Current Noise and Efficiency Droop of Light-Emitting Diodes in Defect-Assisted Carrier Tunneling from an InGaN/GaN Quantum Well
30. Tunneling effects in tilted magnetic fields in n-InGaAs/GaAs structures with strongly coupled double quantum wells
31. Tunnel injection and power efficiency of InGaN/GaN light-emitting diodes
32. Features of the persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells and a tunneling-transparent barrier
33. Determination of the heterojunction type in structures with GaAsSb/GaAs quantum wells with various antimony fractions by optical methods
34. Comparison of different concepts of InAs quantum dot growth on GaAs for 1.3-μm-range lasers
35. Diagnostics of quantum cascade structures by optical methods in the near infrared region
36. Study of methods for lowering the lasing frequency of a terahertz quantum-cascade laser based on two quantum wells
37. InGaN/GaN heterostructures grown by submonolayer deposition
38. Rashba spin splitting and exchange enhancement of the g factor in InAs/AlSb heterostructures with a two-dimensional electron gas
39. Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density
40. Dispersion of the refractive index of epitaxial Pb1 − x Eu x Te (0 ≤ x ≤ 1) alloy layers below the absorption edge
41. Photoluminescence of Hg1 − x Cd x Te based heterostructures grown by molecular-beam epitaxy
42. Defects in the crystal structure of Cd x Hg1 − x Te layers grown on the Si (310) substrates
43. The influence of hydrogenation on the electrical properties of the Cd x Hg1 − x Te epitaxial structures
44. HgCdTe heterostructures on Si (310) substrates for midinfrared focal plane arrays
45. Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them
46. High-resolution emission spectra of pulsed terahertz quantum-cascade lasers
47. Dependence of photoluminescence spectra of epitaxial Pb1 − x Eu x Te (0 ≤ x ≤ 0.1) alloy layers on conditions of growth
48. Persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells
49. GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 μm
50. Monitoring the composition of the Cd1 − z Zn z Te heteroepitaxial layers by spectroscopic ellipsometry
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