32 results on '"Tsatsulnikov, A. F."'
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2. Resonant Reflection of Light from an Excitonic Optical Grating Formed by 100 InGaN Quantum Wells
3. Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells
4. Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam
5. Calculation of the Ga+ FIB Ion Dose Distribution by SEM Image
6. Etching of Disc and Ring Patterns in Si3N4/GaN Structure by Ga+ FIB
7. Selective Epitaxy of Submicron GaN Structures
8. Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs
9. Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography
10. InGaN/GaN light-emitting diode microwires of submillimeter length
11. Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells
12. effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
13. Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs
14. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
15. Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency
16. Capacitance-voltage characteristics of (Al/Ti)/Al2O3/n-GaN MIS structures
17. Optical lattices of excitons in InGaN/GaN quantum well systems
18. Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers
19. Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN
20. Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas
21. Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region
22. InGaN/GaN heterostructures grown by submonolayer deposition
23. Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them
24. Study of tunneling transport of carriers in structures with an InGaN/GaN active region
25. The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes
26. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices
27. Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes
28. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes
29. Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers
30. Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs
31. AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f max as high as 100 GHz
32. AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency fmax as high as 100 GHz.
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