211 results on '"Tsatsul’nikov, A. F."'
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2. Structural and optical properties of InAlN/GaN distributed Bragg reflectors
3. Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes
4. Phase separation and nonradiative carrier recombination in active regions of light-emitting devices based on InGaN quantum dots in a GaN or AlGaN matrix
5. InGaN nanoinclusions in an AlGaN matrix
6. Energy characteristics of excitons in structures based on InGaN alloys
7. Effect of hydrogen on anisotropy of the p-GaN growth rate in the case of side-wall MOCVD
8. Photoluminescence of localized excitons in InGan quantum dots
9. Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots
10. The study of lateral carrier transport in structures with InGaN quantum dots in the active region
11. Studies of the electron spectrum in structures with InGaN quantum dots using photocurrent spectroscopy
12. The optical properties of heterostructures with quantum-confined InGaAsN layers on a GaAs substrate and emitting at 1.3–1.55 μm
13. A study of carrier statistics in InGaN/Gan LED structures
14. Kinetics and inhomogeneous carrier injection in InGaN nanolayers
15. Optical and structural properties of InAs quantum dot arrays grown in an InxGa1−x As matrix on a GaAs substrate
16. Growth of AlGaN epitaxial layers and AlGaN/GaN superlattices by metal-organic chemical vapor deposition
17. Optical properties of MBE-grown ultrathin GaAsN insertions in GaAs matrix
18. Theoretical and experimental study of the effect of InAs growth rate on the properties of QD arrays in InAs/GaAs system
19. Structural and optical properties of InAs quantum dots in AlGaAs matrix
20. Optical properties of structures with ultradense arrays of Ge QDs in an Si matrix
21. High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates
22. Effect of carrier localization on the optical properties of MBE-grown GaAsN/GaAs heterostructures
23. The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix
24. 1.3 µm vertical microcavities with InAs/InGaAs quantum dots and devices based on them
25. The emission from the structures with arrays of coupled quantum dots grown by the submonolayer epitaxy in the spectral range of 1.3–1.4 µm
26. Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range
27. Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots
28. Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots
29. Heteroepitaxial growth of InAs on Si: A new type of quantum dot
30. Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands
31. Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures
32. Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host
33. Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix
34. Gain in injection lasers based on self-organized quantum dots
35. Photo-and electroluminescence in the 1.3-µm wavelength range from quantum-dot structures grown on GaAs substrates
36. Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix
37. Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots
38. Effect of the quantum-dot surface density in the active region on injection-laser characteristics
39. Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates
40. Arrays of strained InAs quantum dots in an (In Ga)As matrix, grown on InP substrates by molecular-beam epitaxy
41. Lateral association of vertically coupled quantum dots
42. Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix
43. Optical properties of submonolayer CdSe-(Zn,Mg)(S,Se) structures
44. Thermal stability of vertically coupled InAs-GaAs quantum dot arrays
45. Influence of mismatch of the lattice parameters on the structural, optical, and transport properties of InGaAs layers grown by molecular beam epitaxy on InP(100) substrates
46. Modulation of a quantum well potential by a quantum-dot array
47. Special features of structural interaction in (AlGaIn)N/GaN heterostructures used as dislocation filters
48. MOCVD-grown AlGaN/GaN heterostructures with high electron mobility
49. A spatially single-mode laser for a range of 1.25–1.28 μm on the basis of InAs quantum dots on a GaAs substrate
50. Gain characteristics of quantum-dot injection lasers
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