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Your search keyword '"Sobolev, M. M."' showing total 26 results
Start Over Author "Sobolev, M. M." Journal semiconductors
26 results on '"Sobolev, M. M."'

17. Effect of neutron irradiation on the spectrum of deep-level defects in GaAs grown by liquid-phase epitaxy in hydrogen or argon ambient

Author

null Soldatenkov F. Y. and null Sobolev M M.

Abstract

We present results of experimental studies of capacitance--voltage characteristics, spectra of deep-level transient spectroscopy of graded high-voltage GaAs p+-p0-i-n0 diodes fabricated by liquid-phase epitaxy at a crystallization temperature of 900oC from one solution--melt due to autodoping with background impurities, in a hydrogen or argon ambient, before and after irradiation with neutrons are presented. After neutron irradiation, deep-level transient spectroscopy spectra revealed wide zones of defect clusters with acceptor-like negatively charged traps in the n0-layer, which arise as a result of electron emission from states located above the middle of the band gap. It was found that the differences in capacitance--voltage characteristics of the structures grown in hydrogen or argon ambient after irradiation are due to different doses of irradiation of GaAs p+-p0-i-n0 structures and different degrees of compensation of shallow donor impurities by deep traps in the layers. Keywords: GaAs, neutron irradiation, capacitance spectroscopy, p0-i-n0-junction, liquid-phase epitaxy, hydrogen, argon.

Published
2022
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25. Effect of In and Al Content on Characteristics of Intrinsic Defects in GaAs-Based Quantum Dots.

Author

Bezyazychnaya, T. V., Zelenkovski&icaron;, V. M., Ryabtsev, G. I., and Sobolev, M. M.

Subjects
CRYSTAL lattices, QUANTUM dots, LOW-dimensional semiconductors, QUANTUM electronics
Abstract

The effect of In and Al on the properties of the As[sub Ga] defect complex (arsenic substituted for gallium at a crystal lattice site) in GaAs-based quantum dots (QDs) was investigated using the nonempirical quantum-chemical SCF–MO–LCAO technique. It is shown that an As[sub Ga] defect can exist in stable and metastable states. Raising the indium or aluminum content in QD enhances the probability of As[sub Ga] defect formation in the stable state; in case of In introduction, this effect is manifested more strongly. The activation energy of the transition between stable and metastable states varies between 0.886 and 2.049 eV, depending on the QD stoichiometry. The formation of an As[sub Ga] defect gives rise to two deep levels in the band gap. © 2004 MAIK “Nauka / Interperiodica”. [ABSTRACT FROM AUTHOR]

Published
2004
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26. Cathodoluminescence of p–n–p microstructures in CuInSe[sub 2] crystals.

Author

Konnikov, S. G., Medvedkin, G. A., Sobolev, M. M., and Solov’ev, S. A.

Subjects
SEMICONDUCTORS, CATHODOLUMINESCENCE, CRYSTALLINE electric field
Abstract

Microstructures in p–CuInSe[sub 2] single crystals tailored by the strong electric field have been studied using the method of local (d≲1 μm) cathodoluminescence (CL). The shortest-wavelength radiation (hω=1.023 eV) has been observed from the n-type layer and longer-wavelength radiation (hω=1.006 eV)—from the p-type regions. An analysis of the cathodoluminescence spectra has allowed us to attribute the experimental features to optical transitions associated with donor and acceptor levels of V[sub Cu],V[sub Se], and Cu[sub i] point defects in the crystal. Test measurements of EBIC, the C–V characteristics, and the DLT spectra confirm the cathodoluminescence data and reveal additional features of the p–n–p microstructures. © 1997 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
1997
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