282 results on '"Maksimov, A"'
Search Results
2. Luminescence properties of Si-containing porous matrix–PbS nanoparticle systems
3. Texturing problems in nanotechnology: Texture control
4. Effect of exposure to optical radiation and temperature on the electrical and optical properties of In2O3 films produced by autowave oxidation
5. Study of the self-organization processes in lead sulfide quantum dots
6. Study of the effect of the acid-base surface properties of ZnO, Fe2O3 and ZnFe2O4 oxides on their gas sensitivity to ethanol vapor
7. Structural and optical properties of thin In2O3 films produced by autowave oxidation
8. Device characteristics of long-wavelength lasers based on self-organized quantum dots
9. Effect of active-region modulation doping on simultaneous ground-state and excited-state lasing in quantum-dot lasers
10. Two-dimensional defects and the problem of the identification of a nanoscale particle structure
11. Features of ecological control in nanotechnologies in view of features of Ca y La1 − y F3 − y and La x Ca1 − x F2 + x structuring
12. Effect of excitation level on the optical properties of GaAs/AlGaO microdisks with an active region containing InAs quantum dots
13. Resonance tunneling of charge carriers in photoexcited type-II ZnSe/BeTe heterostructures
14. The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots
15. Optical studies of a two-dimensional photonic crystal with the InAs/InGaAs quantum-dot structure as an active region
16. Electroluminescence at 1.54 μm in Si:Er/Si structures grown by sublimation molecular-beam epitaxy
17. Photocurrent in self-organized InAs quantum dots in 1.3 μm InAs/InGaAs/GaAs semiconductor laser heterostructures
18. Nonequilibrium room-temperature carrier distribution in InAs quantum dots overgrown with thin AlAs/InAlAs layers
19. Stresses in selectively oxidized GaAs/(AlGa)xOy structures
20. Temperature dependence of the effective coefficient of Auger recombination in 1.3 μm InAs/GaAs QD lasers
21. Effect of p-doping of the active region on the temperature stability of InAs/GaAs QD lasers
22. Design and fabrication technology for arrays for vertical-cavity surface-emitting lasers
23. Internal friction in semiconductor thin films grown using sol-gel technology
24. Effect of nonradiative recombination centers on photoluminescence efficiency in quantum dot structures
25. Optical and structural properties of InAs quantum dot arrays grown in an InxGa1−x As matrix on a GaAs substrate
26. High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates
27. Temperature characteristics of low-threshold high-efficiency quantum-dot lasers with the emission wavelength from 1.25 to 1.29 µm
28. Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE
29. Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode
30. Temperature dependences of photoluminescence spectra of single-crystal Ca2GeO4:Cr4+ films
31. High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates
32. The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix
33. Simultaneous doping of silicon layers with erbium and oxygen in the course of molecular-beam epitaxy
34. Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots
35. Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands
36. Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures
37. Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host
38. Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix
39. Gain in injection lasers based on self-organized quantum dots
40. Photo-and electroluminescence in the 1.3-µm wavelength range from quantum-dot structures grown on GaAs substrates
41. Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix
42. Systematic features of defocused images in scanning electron microscopy and nanoscale size measurements
43. Effect of the quantum-dot surface density in the active region on injection-laser characteristics
44. Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates
45. Deep-level transient spectroscopy in InAs/GaAs laser structures with vertically coupled quantum dots
46. Arrays of strained InAs quantum dots in an (In Ga)As matrix, grown on InP substrates by molecular-beam epitaxy
47. Calculation of the size-quantization levels in strained ZnCdSe/ZnSe quantum wells
48. Luminescence properties of InAs/GaAs quantum dots prepared by submonolayer migration-stimulated epitaxy
49. Lateral association of vertically coupled quantum dots
50. Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.