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Ultrasoft X-ray emission spectroscopy and infrared spectroscopy are used to study the Si/SiO2 composite structure produced by deposition from the Si and SiO2 sources onto the Si substrate. Separation of the sources by a rather long distance (96 mm) made it possible to vary the composition of the layer along the direction parallel to the sample surface in a wide range from almost pure SiO2 to Si. On the basis of the X-ray emission Si L2, 3 spectra, amorphous silicon a-Si and silicon oxide SiO2 were identified in the layers. The infrared spectra show that there are Si nanocrystals in the layers. Variations in the content of Si/SiO2 along the direction parallel to the wafer surface are established. The data obtained by the above-mentioned techniques are correlated with the results of calculations of the layer composition and with the data of profilometric measurements of the layer thicknesses. [ABSTRACT FROM AUTHOR]