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The effect of optical illumination in the visible band on the resistive switching in ITO/ZrO2(Y)/n-Si metal—oxide—semiconductor (MOS) structures (including those with Au nanoparticles embedded in the ZrO2(Y) layer) is studied. It is found that the dependence of the logical gap between the resistance states on the photoexcitation intensity had a threshold nature. The logical gap decreases with further increasing photoexcitation intensity above the threshold. This effect is ascribed to the heating of active layers of the MOS structure due to interband optical absorption in the Si substrate. The suppression of resistive switching by photoexcitation at a wavelength of 650 nm (corresponding to plasmon resonance in Au nanoparticles) due to plasmon optical absorption in nanoparticles is observed. [ABSTRACT FROM AUTHOR]

Abstract: The effect of the material of the metal plates (Au, Ta, W) and exposure to a high-power blue laser on the memristive characteristics of metal-insulator-semiconductor (MIS) capacitors with a Si3N4 film 6 nm thick fabricated on the basis of n+-Si is studied. It is shown that bipolar switching by the current appears only in capacitors with Au. The causes of the absence of bipolar switching in capacitors with Ta and W are explained. The switching of capacitors with Ta by the current and light and the photomemory effect are detected. It is shown that, despite the high doping level of the semiconductor substrate, it decreases the MIS memristor response rate due to a high density of surface states localized at the Si3N4/n+-Si interface. However, illumination allows a significant increase in the response rate due to a decrease in the semiconductor resistivity. The surface state densities are determined. To improve the frequency characteristics of MIS memristors, it is necessary to achieve a low surface state density. [ABSTRACT FROM AUTHOR]