29 results on '"A. Zabrodskii"'
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2. Irradiation with Argon Ions of Cr/4H-SiC Photodetectors
3. Structural and Optical Characteristics of 4H-SiC UV Detectors Irradiated with Argon Ions
4. Silicon Light-Emitting Diodes with Luminescence from (113) Defects
5. Injection-induced terahertz electroluminescence from silicon p–n structures
6. Role of electrostatic fluctuations in doped semiconductors upon the transition from band to hopping conduction (by the example of p-Ge:Ga)
7. A Quasi-Classical Model of the Hubbard Gap in Lightly Compensated Semiconductors
8. Detection of impurity diamagnetic susceptibility and its behavior in n-Ge:As in the region of the insulator–metal phase transition
9. Specific features of the anisotropy of low-temperature microwave magnetoresistivity of lightly doped p-Ge due to the presence of light and heavy holes
10. Spin-peierls transition in the random impurity sublattice of a semiconductor
11. Calculation of capacitance of self-compensated semiconductors with intercenter hops of one and two electrons (by the example of silicon with radiation defects)
12. Electron spin resonance of interacting spins in n-Ge: II. Change in the width and shape of lines
13. Field effect and capacitance of silicon crystals with hopping conductivity over point radiation defects pinning the Fermi level
14. Quasi-static capacitance of a weakly compensated semiconductor with hopping conduction (on the example of p-Si:B)
15. Low-temperature microwave magnetoresistance of lightly doped p-Ge and p-Ge1−x Six
16. Atomic-force-microscopy visualization of Si nanocrystals in SiO2 thermal oxide using selective etching
17. Specific features of electron spin resonance in 4H-SiC in the vicinity of the insulator-metal phase transition: II. Analysis of the width and shape of lines
18. Special features of electron spin resonance in 4H-SiC in the vicinity of the insulator-metal phase transition: I. Effects of spin interaction
19. Maximum hopping direct current conductivity via hydrogen-like impurities in semiconductors
20. Microwave magnetoresistance of compensated p-Ge:Ga in the region of the insulator-metal phase transition
21. Hysteresis of magnetoresistance in neutron-transmutation-doped Ge in the region of hopping transport over the Coulomb-gap states
22. The magnetoresistance of compensated Ge:As at microwave frequencies in the vicinity of the metal-insulator phase transition
23. Electron spin resonance in the vicinity of metal-insulator transition in compensated n-Ge:As
24. Contribution of light holes to the Hall effect for the complex valence band in germanium and its dependence on doping level
25. Distinctive features of the magnetoresistance of degenerately doped n-InAs and their influence on magnetic-field-dependent microwave absorption
26. Thermopower of transmutation-doped Ge:Ga in the region for hopping conductivity
27. Aleksandr Aleksandrovich Rogachev
28. Injection-induced terahertz electroluminescence from silicon p-n structures.
29. Distinctive features of the magnetoresistance of degenerately doped n-lnAs and their influence on magnetic.field-dependent microwave absorption
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