26 results on '"A. P. Milenin"'
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2. Radiation-induced surface degradation of GaAs and high electron mobility transistor structures
3. Effect of microwave irradiation on the resistance of Au-TiB x -Ge-Au-n-n +-n ++-GaAs(InP) ohmic contacts
4. Temperature dependence of the contact resistance of ohmic contacts to III–V compounds with a high dislocation density
5. Effect of microwave irradiation on the photoluminescence of bound excitons in CdTe:Cl single crystals
6. Effect of p-n junction overheating on degradation of silicon high-power pulsed IMPATT diodes
7. Radiation effects and interphase interactions in ohmic and barrier contacts to indium phosphide as induced by rapid thermal annealing and irradiation with γ-ray 60Co photons
8. Effect of microwave treatment on current flow mechanisms in Au-TiBx-Al-Ti-n+-n-n+-GaN-Al2O3 ohmic contacts
9. Radiation damage of contact structures with diffusion barriers exposed to irradiation with 60Coγ-ray photons
10. Interphase interactions and the mechanism of current flow in Au-TiB x -AuGe-n-GaP ohmic contacts
11. Specific features of recombination processes in CdTe films produced in different temperature conditions of growth and subsequent annealing
12. Properties of GaN(SiC)-(Ti, Zr)B x contacts subjected to rapid thermal annealing
13. Radiation effects in multilayer ohmic contacts Au-Ti-Al-Ti-n-GaN
14. Au-TiB x -n-6H-SiC Schottky barrier diodes: Specific features of charge transport in rectifying and nonrectifying contacts
15. Heat- and radiation-resistant contacts to SiC made on the basis of quasi-amorphous ZrB2 films
16. Changes in characteristics of gadolinium, titanium, and erbium oxide films on the SiC surface under microwave treatment
17. Properties of barrier contacts with nanosize TiB x layers to InP
18. Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride
19. Thermal-resistant TiB x -n-GaP Schottky diodes
20. Diffusion-barrier contacts based on the TiN and Ti(Zr)Bx interstitial phases in the microwave diodes for the range of 75–350 GHz
21. Interphase interactions and features of structural relaxation in TiBx-n-GaAs (InP, GaP, 6H-SiC) contacts subjected to active treatment
22. Phase and structural changes stimulated in multilayer contacts to n-GaAs by rapid thermal annealing
23. Special features of formation and characteristics of Ni/21R-SiC Schottky diodes
24. The effect of composition on the properties and defect structure of the CdS-Ga2S3 solid solution
25. Formation and thermal stability of contacts based on titanium borides and titanium nitrides with gallium arsenide
26. Effect of ultrasonic treatment on deformation effects and the structure of local centers in the substrate and in the contact regions of M/n−n +-GaAs structures (M=Pt, Cr, W)
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