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Your search keyword '"Usikov, A. S."' showing total 1 results
Start Over Author "Usikov, A. S." Topic spectrum analysis Journal semiconductors
1 results on '"Usikov, A. S."'

1. Deep Levels in the Band Gap of GaN Layers Irradiated with Protons.

Author

Sobolev, M. M., Sobolev, N. A., Usikov, A. S., Shmidt, N. M., Yakimenko, A. N., Gusinskiı, G. M., and Naıdenov, V. O.

Subjects
SPECTRUM analysis, GALLIUM arsenide
Abstract

Deep-level transient spectroscopy was used to study the parameters of deep levels in the band gap of epitaxial n-GaN layers after irradiaton of the Schottky barriers with 1-MeV protons to a dose of 10[sup 12] cm[sup -2]. A deep level EP1 with an activation energy of 0.085 eV was introduced by irradiation into the upper half of the GaN band gap. The introduction rate of the corresponding defect was found to depend on the bias voltage applied to the Schottky barrier during irradiation. [ABSTRACT FROM AUTHOR]

Published
2002
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