65 results on '"Foxon, C. T."'
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2. Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties
3. Characterization of p-GaN1−xAsx/n-GaN PN junction diodes
4. Microstructure of InxGa1−xN nanorods grown by molecular beam epitaxy
5. Raman scattering study of cubic GaN and GaMnN epilayers grown by plasma- assisted molecular beam epitaxy
6. Independent determination of In and N concentrations in GaInNAs alloys
7. Growth and characterization of free-standing zinc-blende (cubic) GaN layers and substrates
8. Raman scattering study of undoped and As-doped GaN grown with different III/V ratios
9. Optimization of RF plasma sources for the MBE growth of nitride and dilute nitride semiconductor material
10. Determination of the Mn concentration in GaMnAs
11. P-type conductivity in cubic GaMnN layers grown by molecular beam epitaxy
12. Study of photoluminescence from self-formed GaAs nanocrystallites in As-doped GaN grown by molecular beam epitaxy
13. Surface acoustic wave attenuation by the localized states of a two-dimensional carrier system in a magnetic field
14. A study of the mechanisms responsible for blue emission from arsenic-doped gallium nitride
15. An investigation into the origin of the 3.424 eV peak in the low-temperature photoluminescence of GaN grown by molecular beam epitaxy
16. The implications of spontaneous polarization effects for carrier transport measurements in GaN
17. Optical study of the -GaN/GaAs interface properties as a function of MBE growth conditions
18. Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux
19. MBE growth and characterization of magnesium-doped gallium nitride
20. Searches for skyrmions in the limit of zero -factor
21. Photoluminescence of MBE grown wurtzite Be-doped GaN
22. The electron mobility and compensation in n-type GaN
23. Secondary ion mass spectroscopy investigations of magnesium and carbon doped gallium nitride films grown by molecular beam epitaxy
24. Investigation of aluminium ohmic contacts to n-type GaN grown by molecular beam epitaxy
25. Effects of substrate type on the characteristics of GaN epitaxial films grown by molecular beam epitaxy
26. Investigation of Au Schottky contacts on GaN grown by molecular beam epitaxy
27. Tailored carrier escape rates in asymmetric double quantum wells
28. Observation of resonant Raman lines during the photoluminescence of doped GaN
29. Photoluminescence from GaN films grown by MBE on an substrate
30. The dependence of the Composite Fermion effective mass on carrier density and Zeeman energy
31. Secondary-ion mass spectroscopy (SIMS) investigations of Be and Si incorporation in GaN grown by molecular beam epitaxy (MBE)
32. Low-temperature luminescence study of GaN films grown by MBE
33. Picosecond photoluminescence studies of carrier escape processes in a single quantum well
34. Far-infrared investigations of band non-parabolicities in highly doped multiple quantum well structures
35. Photoluminescence and Raman scattering from GaN layers grown on GaAs and GaP substrates
36. Strain-induced magnetoresistance oscillations in GaAs-AlGaAs heterojunctions with ferromagnetic and superconducting submicrometre gratings
37. Evaluation of the minority carrier diffusion length by means of electron beam induced current and Monte Carlo simulation in AlGaAs and GaAs p-i-n solar cells
38. Recombination lifetime measurements in AlGaAs/GaAs quantum well structures
39. Experimental determination of the transport properties of composite fermions with reduced Lande g-factor
40. Optical studies of resonant and non-resonant tunnelling in GaAs/AlxGa1-xAs quantum wells
41. A patterned gate architecture for the study of high-quality AlGaAs/GaAs systems in the extreme quantum limit
42. Sulphide passivation of (AlGa)As/GaAs modulation-doped heterostructures
43. Enhancement of the 4/3 fractional quantum Hall state with hydrostatic pressure
44. Optical and electrical investigation of subband populations, mobilities and Fermi level pinning in delta-doped quantum wells
45. The pressure dependence of the effective mass in a GaAs/AlGaAs heterojunction
46. Thermo-electric properties of quantum point contacts
47. Electron-electron scattering probed by a collimated electron beam
48. Subpicosecond real-space charge transfer in GaAs/AlAs type II superlattices
49. The effect of second subband occupation on the thermopower of a high mobility GaAs-Al0.33Ga0.67As heterojunction
50. Inter-subband scattering rates in GaAs-GaAlAs heterojunctions
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