Search

WOS: 000165323900014, The analytical solution of the Schrodinger equation for a multiple-quantum-well system subjected to an externally applied electric field in the growth direction and an externally applied tilted magnetic field are obtained and results are discussed. The dependence of the energy spectrum of the system on the external electric field as a function of the orbit centre is also discussed and the behaviour of the wavefunctions of the system is examined.

WOS: 000085453200026, The binding energy of excitons in symmetric and asymmetric coupled double GaAs/Ga1-xAlxAs quantum wells is calculated by using a variational approach. The results have been obtained in the presence of a uniform magnetic field, as a function of the potential symmetry, size of the quantum well and coupling parameter of the wells. We show that by increasing the applied magnetic field one can obtain large binding between electrons and holes which is similar to the change in the dimensions of the structure. This behaviour in the excitonic binding for different wells and barrier geometries can be used to study these systems in regions of interest, without the need for the growth of many different samples.

WOS: 000080303700008, A quasi-bound state approximation is used to obtain the electric field dependence of the eigenvalues, eigenfunctions, electron-hole overlap integrals and excitonic binding energies for coupled, graded double quantum wells (GDQWs). In GDQWs the intra- and interband transitions have a much stronger electric field dependence than those in the square quantum well structures. Also, unlike the single or double square wells the operation wavelength of GDQW devices can be tuned by changing not only the magnitude but also the polarity of the applied voltage. Thus GDQWs have potential for applications in optoelectronic devices such as tunable electro-absorption modulators and infrared photodetectors.