55 results on '"Foxon, C. T."'
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2. Surface acoustic wave attenuation by the localized states of a two-dimensional carrier system in a magnetic field.
3. A study of the mechanisms responsible for blue emission from arsenic-doped gallium nitride.
4. MBE growth and characterization of magnesium-doped gallium nitride.
5. The electron mobility and compensation in n-type GaN.
6. Secondary ion mass spectroscopy investigations of magnesium and carbon doped gallium nitride films grown by molecular beam epitaxy.
7. Investigation of Au Schottky contacts on GaN grown by molecular beam epitaxy.
8. Effects of substrate type on the characteristics of GaN epitaxial films grown by molecular beam epitaxy.
9. Secondary-ion mass spectroscopy (SIMS) investigations of Be and Si incorporation in GaN grown by molecular beam epitaxy (MBE).
10. Low-temperature luminescence study of GaN films grown by MBE.
11. Picosecond photoluminescence studies of carrier escape processes in a single quantum well.
12. Recombination lifetime measurements in AlGaAs/GaAs quantum well structures.
13. Experimental determination of the transport properties of composite fermions with reduced Lande g-factor.
14. Inter-subband scattering rates in GaAs-GaAlAs heterojunctions.
15. In situ grown Schottky gates on GaAs/AlGaAs heterojunctions.
16. Some results on the dependence of the 2D electron effective mass on temperature and magnetic field.
17. An investigation into the origin of the 3.424 eV peak in the low-temperature photoluminescence of GaN grown by molecular beam epitaxy.
18. The implications of spontaneous polarization effects for carrier transport measurements in GaN.
19. Optical study of the -GaN/GaAs interface properties as a function of MBE growth conditions.
20. Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux.
21. Searches for skyrmions in the limit of zero -factor.
22. Photoluminescence of MBE grown wurtzite Be-doped GaN.
23. Investigation of aluminium ohmic contacts to n-type GaN grown by molecular beam epitaxy.
24. Tailored carrier escape rates in asymmetric double quantum wells.
25. Observation of resonant Raman lines during the photoluminescence of doped GaN.
26. Photoluminescence from GaN films grown by MBE on an substrate.
27. The dependence of the Composite Fermion effective mass on carrier density and Zeeman energy.
28. Far-infrared investigations of band non-parabolicities in highly doped multiple quantum well structures.
29. Photoluminescence and Raman scattering from GaN layers grown on GaAs and GaP substrates.
30. Strain-induced magnetoresistance oscillations in GaAs-AlGaAs heterojunctions with ferromagnetic and superconducting submicrometre gratings.
31. Evaluation of the minority carrier diffusion length by means of electron beam induced current and Monte Carlo simulation in AlGaAs and GaAs p-i-n solar cells.
32. Optical studies of resonant and non-resonant tunnelling in GaAs/AlxGa1-xAs quantum wells.
33. A patterned gate architecture for the study of high-quality AlGaAs/GaAs systems in the extreme quantum limit.
34. Sulphide passivation of (AlGa)As/GaAs modulation-doped heterostructures.
35. Enhancement of the 4/3 fractional quantum Hall state with hydrostatic pressure.
36. Optical and electrical investigation of subband populations, mobilities and Fermi level pinning in delta-doped quantum wells.
37. The pressure dependence of the effective mass in a GaAs/AlGaAs heterojunction.
38. Electron-electron scattering probed by a collimated electron beam.
39. Thermo-electric properties of quantum point contacts.
40. Subpicosecond real-space charge transfer in GaAs/AlAs type II superlattices.
41. The effect of second subband occupation on the thermopower of a high mobility GaAs-Al0.33Ga0.67As heterojunction.
42. A comparison of AlAs/GaAs multiple quantum wells grown by molecular beam and migration-enhanced epitaxy.
43. Nature of the lowest confined electron state in GaAs/AlAs type II quantum wells as a function of AlAs thickness.
44. Cyclotron phonon emission and electron energy loss rates in GaAs-GaAlAs heterojunctions.
45. Influence of acoustic phonons on inter-subband scattering in GaAs-GaAlAs heterojunctions.
46. Residual donor contamination in MOCVD, MOMBE and MBE GaAs studied by far-infrared spectroscopy.
47. Optimisation of (Al,Ga)As/GaAs two-dimensional electron gas structures for low carrier densities and ultrahigh mobilities at low temperatures.
48. Observation of surface phonon-polaritons on a MQW specimen by attenuated-total-reflection spectroscopy.
49. Quantum size effects in GaAs-Ga1-xAlxAs heterojunction wires.
50. Sub-band populations and the spatial distribution of electrons in GaAs/(Al,Ga)As modulation-doped quantum wells.
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