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Nanowire (NW) structure is superior at defining the direction of device due to its one-dimension feature. In this work, the p-n ZnO NWs were successfully synthesized, and were able to vertically grow on Ta 2 O 5 substrate. Thus, the well-performed Au/p-n ZnO NWs/Ta 2 O 5 /Au one-diode one-memoristor device was fabricated. The p-n ZnO NWs not only exhibited excellent rectifying behavior, but also played the role of oxygen storing during filaments formation. Therefore, the low-leakage device aimed to build high-density crossbar arrays which was required for accelerating the combination of 5 G with AI in near future applications. ToC: The p-n ZnO nanowires can directly grow on Ta 2 O 5 substrate by the hydrothermal method. In the Au/p-n NWs/Ta 2 O 5 /Au device, the p-n ZnO NWs not only formed an asymmetric barrier to restricted the sneak flow, but also aimed to supply the oxygen vacancies source for Ta 2 O 5 thin film layer during forming and set process. Image, graphical abstract [ABSTRACT FROM AUTHOR]

We reported the fabrication of densely twinned Cu films with highly (211) texture developed from the annealing of <111>-oriented nanotwinned copper (nt-Cu) films. During the annealing at 300 °C, abnormal grain growth occurred in the nt-Cu film and resulted in a microstructure dominated by the anomalously large <211>-oriented grains. Moreover, densely-intersected annealing twin bands with <221>, <611>, and <931> orientations are embedded in the large <211> grains. The measured annealing twin density is 0.2 µm−1, which is highest among the reported values in previous literatures with similar grain size. Extensive multiple twinning process may occur during the annealing to form the unique microstructure. We reported the fabrication of densely twinned Cu films with highly (211) texture developed from the annealing of <111>-oriented nanotwinned copper (nt-Cu) films. During the annealing at 300 °C, abnormal grain growth occurred in the nt-Cu film and resulted in a microstructure dominated by large <211>-oriented grains embedded with densely-intersected annealing twin bands with <221>, <611>, and <931> orientations, as shown in Fig (a) below. The measured annealing twin density is 0.2 µm−1, which is highest among the reported values in previous literatures. The boundaries shown in red in Fig (b) represent the ∑3 twin boundaries. Image, graphical abstract [ABSTRACT FROM AUTHOR]