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Nanowire (NW) structure is superior at defining the direction of device due to its one-dimension feature. In this work, the p-n ZnO NWs were successfully synthesized, and were able to vertically grow on Ta 2 O 5 substrate. Thus, the well-performed Au/p-n ZnO NWs/Ta 2 O 5 /Au one-diode one-memoristor device was fabricated. The p-n ZnO NWs not only exhibited excellent rectifying behavior, but also played the role of oxygen storing during filaments formation. Therefore, the low-leakage device aimed to build high-density crossbar arrays which was required for accelerating the combination of 5 G with AI in near future applications. ToC: The p-n ZnO nanowires can directly grow on Ta 2 O 5 substrate by the hydrothermal method. In the Au/p-n NWs/Ta 2 O 5 /Au device, the p-n ZnO NWs not only formed an asymmetric barrier to restricted the sneak flow, but also aimed to supply the oxygen vacancies source for Ta 2 O 5 thin film layer during forming and set process. Image, graphical abstract [ABSTRACT FROM AUTHOR]