1. Stacking change in MoS2 bilayers induced by interstitial Mo impurities
- Author
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Pedro A. Orellana, Luis Rosales, Natalia Cortés, J. W. González, Andrés Ayuela, Fondo Nacional de Desarrollo Científico y Tecnológico (Chile), Ministerio de Economía y Competitividad (España), Eusko Jaurlaritza, Comisión Nacional de Investigación Científica y Tecnológica (Chile), and Universidad del País Vasco
- Subjects
Materials science ,Band gap ,Exciton ,Stacking ,FOS: Physical sciences ,lcsh:Medicine ,02 engineering and technology ,01 natural sciences ,Computer Science::Digital Libraries ,Article ,Crystal ,Condensed Matter::Materials Science ,Impurity ,Condensed Matter::Superconductivity ,Mesoscale and Nanoscale Physics (cond-mat.mes-hall) ,0103 physical sciences ,010306 general physics ,lcsh:Science ,Condensed Matter - Materials Science ,Multidisciplinary ,Dopant ,Condensed Matter - Mesoscale and Nanoscale Physics ,Bilayer ,Doping ,lcsh:R ,Materials Science (cond-mat.mtrl-sci) ,021001 nanoscience & nanotechnology ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Crystallography ,Condensed Matter::Strongly Correlated Electrons ,lcsh:Q ,0210 nano-technology - Abstract
We use a theoretical approach to reveal the electronic and structural properties of molybdenum impurities between MoS2 bilayers. We find that interstitial Mo impurities are able to reverse the well-known stability order of the pristine bilayer, because the most stable form of stacking changes from AA' (undoped) into AB' (doped). The occurrence of Mo impurities in different positions shows their split electronic levels in the energy gap, following octahedral and tetrahedral crystal fields. The energy stability is related to the accommodation of Mo impurities compacted in hollow sites between layers. Other less stable configurations for Mo dopants have larger interlayer distances and band gaps than those for the most stable stacking. Our findings suggest possible applications such as exciton trapping in layers around impurities, and the control of bilayer stacking by Mo impurities in the growth process., Tis work was part fnanced by a Fondecyt grant 1140388 and Anillo Bicentenario de Ciencia y Tecnología, Conicyt grant Act-1204. J.W. González and A. Ayuela acknowledge the financial support of the Spanish Ministry of Economy and Competitiveness MINECO projects FIS2016-76617-P, the Basque Government under the ELKARTEK project(SUPER), and the University of the Basque Country grant No. IT-756-13. N. Cortés acknowledge support from the FSM1204 project, Conicyt grant No 21160844 and the hospitality of CFMMPC and DIPC.
- Published
- 2018