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β-Ga2O3 MOSFETs are demonstrated on heterogeneous Ga2O3-Al2O3-Si (GaOISi) substrate fabricated by ion-cutting process. Enhancement (E)- and depletion (D)-mode β-Ga2O3 transistors are realized on by varying the channel thickness (Tch). E-mode GaOISi transistor with a Tch of 15 nm achieves a high threshold voltage VTH of ∼8 V. With the same T increase, GaOISi transistors demonstrate more stable ON-current ION and OFF-current IOFF performance compared to the reported devices on bulk Ga2O3 wafer. Transistors on GaOISi achieve the breakdown voltage of 522 and 391 V at 25°C and 200°C, respectively. [ABSTRACT FROM AUTHOR]