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Hydrogenation of biomass-derived furfural is an important process in biofuel production.

We investigated the effects of Pd precursors and preparation methods on the physicochemical properties and performance of Pd/TiO2 catalysts in the photocatalytic degradation of methyl violet. To confirm the influence of the precursors, Pd/TiO2 catalysts were prepared via chemical reduction (CR) using four different Pd precursors. Additionally, to determine the effects of preparation methods, Pd/TiO2 catalysts were fabricated using K2PdCl4 precursor via three different methods: CR, deposition–precipitation (DP), and impregnation. The CO chemisorption results showed that the catalyst prepared via DP using the K2PdCl4 precursor, i.e., Pd/TiO2_K_DP, displayed the highest Pd dispersion of 12.42% owing to the stable formation of Pd(OH)2, which strongly interacted with the –OH groups on the TiO2 support. Although the catalyst prepared via CR using the Pd(NH3)4Cl2·H2O (PA) precursor, i.e., Pd/TiO2_PA_CR, had the lowest Pd dispersion of 0.7%, it exhibited the highest absorption of 26% after 30 min in the dark. It was found that high Pd2+/Pd0 ratio in dark conditions adversely affected the absorption of MV owing to electrostatic repulsion between the cationic dyes and metal nanoparticles. However, the Pd dispersion and the specific surface area played a key role in the photocatalytic activity under UV irradiation. Pd/TiO2_K_CR with higher Pd dispersion showed the highest photocatalytic activity and reaction rate of 0.0212 min−1.

Etch characteristics of ovonic threshold switch (OTS) materials composed of Ge–As–Te for a phase-change random access memory (PCRAM) has been investigated using reactive ion etching via hydrogen-based gases such as H2, CH4, NH3, CH4 + H2, and CH4 + NH3. Among the investigated hydrogen-based gases, NH3 showed the highest etching rate of about 0.52 nm s−1, but the formation of nitride compounds and the increased roughness were observed on the OTS surface by nitrogen. The use of other hydrogen-based gases such as CH4 and CH4 + H2 showed the deposition and low OTS etch rate, respectively, due to the presence of carbon in CH4. Even though H2 showed the better etch characteristics due to the no surface residues or compounds on the OTS surface related to carbon or nitrogen in the etch gases, the best OTS etch characteristics such as the second highest etch rate of 0.45 nm s−1, the lowest surface roughness of 0.21 nm, and no surface residues or compounds were observed with CH4 + NH3 due to the removal of carbon and nitrogen on the surface by the formation of volatile CN compounds while maintaining a high hydrogen atomic concentration in the plasma.

We investigated the effects of Pd precursors and preparation methods on the physicochemical properties and performance of Pd/TiO