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Spectral linewidths are used to assess a variety of physical properties, even as spectral overlap makes quantitative extraction difficult owing to uncertainty. Uncertainty, in turn, can be minimized with the choice of appropriate experimental conditions used in spectral collection. In response, we assess the experimental factors dictating uncertainty in the quantification of linewidth from a Raman experiment highlighting the comparative influence of (1) spectral resolution, (2) signal to noise, and (3) relative peak intensity (RPI) of the overlapping peaks. Practically, Raman spectra of SiGe thin films were obtained experimentally and simulated virtually under a variety of conditions. RPI is found to be the most impactful parameter in specifying linewidth followed by the spectral resolution and signal to noise. While developed for Raman experiments, the results are generally applicable to spectroscopic linewidth studies illuminating the experimental trade-offs inherent in quantification.

The 3ω technique has become a popular method for determining the thermophysical properties of microscale and bulk materials. The prerequisite fabrication of a highly linear metal line a few hundred nanometers thick on the sample can be a failing point in specific material systems. This difficulty can be overcome by utilizing a bidirectional experimental geometry that employs a contact resistance between the sample and heating wire, which also allows for data collection under varying axial pressure loads. In this work, such a system is demonstrated with an emphasis on developing a thermal mount that will optimize sensitivity to the thermophysical parameters of interest: the sample's thermal conductivity, volumetric heat capacity, and the contact resistance between the sample and mount. A general thermal model is presented that can be simplified to analyze nearly any similar system. This model is then employed to analyze a sample in the mounting scheme described with varying applied pressures to demonstrate the general feasibility of the system.

Despite a larger sensitivity to temperature as compared to other microscale thermometry methods, Raman based measurements typically have greater uncertainty. In response, a new implementation of Raman thermometry is presented having lower uncertainty while also reducing the time and hardware needed to perform the experiment. Using a modulated laser to excite the Raman response, the intensity of only a portion of the total Raman signal is leveraged as the thermometer by using a single element detector monitored with a lock-in amplifier. Implementation of the lock-in amplifier removes many sources of noise that are present in traditional Raman thermometry where the use of cameras preclude a modulated approach. To demonstrate, the portion of the Raman spectrum that is most advantageous for thermometry is first identified by highlighting, via both numerical prediction and experiment, those spectral windows having the largest linear dependence on temperature. Using such windows, the new technique, termed single element Raman thermometry (SERT), is utilized to measure the thermal profile of an operating microelectromechanical systems (MEMS) device and compared to results obtained with a traditional Raman approach. The SERT method is shown to reduce temperature measurement uncertainty by greater than a factor of 2 while enabling 3 times as many data points to be taken in an equal amount of time as compared to traditional Raman thermometry.